AO7600 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO7600 uses advanced trench technology MOSFETs to n-channel p-channel provide excellent R and low gate charge. The V (V) = 20V -20V DS(ON) DS complementary MOSFETs may be used to form a level shifted I = 0.9A (V =4.5V) -0.6A (V =-4.5V) D GS GS high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. R R DS(ON) DS(ON) < 300m (V =4.5V) < 550m (V =-4.5V) GS GS < 350m (V =2.5V) < 700m (V =-2.5V) GS GS < 450m (V =1.8V) < 950m (V =-1.8V) GS GS SC70-6L (SOT-363) Pin1 Bottom View D2 Top View D1 D1 S1 1 6 G2 G1 2 G1 5 G2 S2 S1 3 4 D2 S2 n-channel p-channel Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 20 -20 V DS Gate-Source Voltage V 8 8 V GS T =25C Continuous Drain Current 0.9 -0.6 A A T =70C I 0.7 -0.48 A A D B Pulsed Drain Current I 5 -3 DM T =25C 0.3 0.3 A P W D Power Dissipation T =70C 0.19 0.19 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units A Maximum Junction-to-Ambient t 10s n-ch 360 415 C/W R JA A Steady-State Maximum Junction-to-Ambient n-ch 400 460 C/W C Steady-State Maximum Junction-to-Lead R n-ch 300 350 C/W JL A t 10s Maximum Junction-to-Ambient p-ch 360 415 C/W R A JA Maximum Junction-to-Ambient Steady-State p-ch 400 460 C/W C Steady-State R p-ch 300 350 C/W Maximum Junction-to-Lead JL Rev 5: April 2015 www.aosmd.com Page 1 of 8 N-Channel: Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =16V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =8V 25 A GSS DS GS V Gate Threshold Voltage V =V I =250A 0.5 0.75 0.9 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 5 A GS DS D(ON) V =4.5V, I =0.9A 181 300 GS D m T =125C 253 330 J R Static Drain-Source On-Resistance DS(ON) V =2.5V, I =0.75A 237 350 m GS D V =1.8V, I =0.7A 317 450 m GS D g Forward Transconductance V =5V, I =0.8A 2.6 S DS D FS I =0.5A,V =0V V Diode Forward Voltage 0.69 1 V S GS SD I Maximum Body-Diode Continuous Current 0.4 A S DYNAMIC PARAMETERS C Input Capacitance 101 120 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 17 pF GS DS oss C Reverse Transfer Capacitance 14 pF rss V =0V, V =0V, f=1MHz R Gate resistance 3 4 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 1.57 1.9 nC g V =4.5V, V =10V, I =0.8A Q Gate Source Charge 0.13 nC GS DS D gs Q Gate Drain Charge 0.36 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 33..22 nnss D(on) D(on) V =5V, V =10V, R =12.5, t Turn-On Rise Time 4 ns r GS DS L R =6 t Turn-Off DelayTime 15.5 ns GEN D(off) t Turn-Off Fall Time 2.4 ns f t I =0.8A, dI/dt=100A/s 8.1 rr Body Diode Reverse Recovery Time F 6.7 ns Q I =0.8A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 1.6 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: April 2015 www.aosmd.com Page 2 of 8