AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to V (V) = 20V DS provide excellent R , low gate charge and I = 7.5 A (V = 10V) DS(ON) D GS operation with gate voltages as low as 1.8V while R < 16m (V = 10V) DS(ON) GS retaining a 12V V rating. It is ESD protected. GS(MAX) R < 18m (V = 4.5V) DS(ON) GS This device is suitable for use as a uni-directional or R < 20m (V = 3.6V) DS(ON) GS bi-directional load switch, facilitated by its common- R < 24m (V = 2.5V) DS(ON) GS drain configuration. R < 34m (V = 1.8V) DS(ON) GS ESD Rating: 2500V HBM D1 D2 TSSOP-8 Top View D1/D2 1 8 D1/D2 S1 2 7 S2 G1 G2 S1 3 6 S2 G1 4 5 G2 S1 S2 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 7.5 Continuous Drain A A Current T =70C I 6 A A D B Pulsed Drain Current I 30 DM T =25C 1.5 A P W D A Power Dissipation T =70C 0.96 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 64 83 C/W R JA A Steady-State Maximum Junction-to-Ambient 89 120 C/W C Steady-State Maximum Junction-to-Lead R 53 70 C/W JL Alpha & Omega Semiconductor, Ltd.AO8814 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 20 V DSS D GS V =16V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =10V 10 A DS GS GSS V =0V, I =250uA BV Gate-Source Breakdown Voltage 12 V DS G GSO V =V I =250A V Gate Threshold Voltage 0.5 0.71 1 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V =10V, I =7.5A 10 13 16 GS D m T =125C 14 18 22 J V =4.5V, I =7A 11.5 15 18 m GS D R Static Drain-Source On-Resistance DS(ON) V =3.6V, I =6A 13 16.8 20 m GS D V =2.5V, I =6A 15 19 24 m GS D V =1.8V, I =5A 20 26 34 m GS D g Forward Transconductance V =5V, I =7.5A 30 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.74 1 V S GS SD I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 1390 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 190 pF GS DS oss C Reverse Transfer Capacitance 150 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.5 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 15.4 nC g V =4.5V, V =10V, I =7.5A Q Gate Source Charge 1.4 nC GS DS D gs Q Gate Drain Charge 4 nC gd t Turn-On DelayTime 6.2 ns D(on) t Turn-On Rise Time V =5V, V =10V, R =1.3, 11 ns r GS DS L R =3 t Turn-Off DelayTime 40.5 ns GEN D(off) t Turn-Off Fall Time 10 ns f t I =7.5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 15 ns Q I =7.5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 5.1 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. JA A The value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. Rev 5: Feb 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd.