AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM V DS 80V The AOD4182 is fabricated with SDMOS trench I (at V =10V) 53A technology that combines excellent R with low gate D GS DS(ON) < 15.5m charge and low Qrr.The result is outstanding efficiency R (at V =10V) DS(ON) GS with controlled switching behavior. This universal < 20m R (at V =7V) DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units V Drain-Source Voltage 80 V DS V 25 Gate-Source Voltage V GS T =25C 53 Continuous Drain C I D Current T =100C 38 A C C Pulsed Drain Current I 85 DM T =25C 8.5 Continuous Drain A I A DSM Current T =70C 6.8 A C Avalanche Current I , I 45 A AS AR C Avalanche energy L=0.1mH E , E 101 mJ AS AR T =25C 100 C P W B D Power Dissipation T =100C 50 C T =25C 2.5 A P W A DSM Power Dissipation T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16 20 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 50 C/W R Maximum Junction-to-Case Steady-State 1 1.5 C/W JC Rev0: Jan 2010 www.aosmd.com Page 1 of 7 AOD4182 Electrical Characteristics (T =25C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 80 V DSS D GS V =80V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 25V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2.8 3.3 4.2 V GS(th) DS GS D I On state drain current V =10V, V =5V 85 A D(ON) GS DS V =10V, I =20A 12.5 15.5 GS D m R Static Drain-Source On-Resistance T =125C 22.5 28 DS(ON) J m V =7V, I =20A 16 20 GS D g Forward Transconductance V =5V, I =20A 33 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 54 A S DYNAMIC PARAMETERS C Input Capacitance 1335 1670 2005 pF iss V =0V, V =40V, f=1MHz C Output Capacitance 150 215 280 pF oss GS DS C Reverse Transfer Capacitance 40 72 100 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.35 0.75 1.2 g GS DS SWITCHING PARAMETERS (10V) Q Total Gate Charge 22 28 34 nC g Q Gate Source Charge V =10V, V =40V, I =20A 8.8 11 13 nC GS DS D gs Q Gate Drain Charge 5 8 11 nC gd t Turn-On DelayTime 12 ns D(on) t Turn-On Rise Time V =10V, V =40V, R =2, 9ns r GS DS L R =3 t Turn-Off DelayTime 20 ns D(off) GEN t Turn-Off Fall Time 8ns f t I =20A, dI/dt=500A/s 14.5 rr Body Diode Reverse Recovery Time F 21 27.5 ns Q I =20A, dI/dt=500A/s 45.5 nC rr Body Diode Reverse Recovery Charge F 65 85 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends on DSM JA the user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jan 2010 www.aosmd.com Page 2 of 7