AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary V The AOD444/AOI444 combine advanced trench MOSFET DS 60V 12A technology with a low resistance package to provide I (at V =10V) D GS extremely low R . Those devices are suitable for use DS(ON) < 60m R (at V =10V) DS(ON) GS in PWM, load switching and general purpose applications. < 85m R (at V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested TO252 TO-251A DPAK IPAK D TopView Bottom View TopView Bottom View D D D G S S G G D D S G S G S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain T =25C 12 C I G D Current T =100C 9 A C C Pulsed Drain Current I 30 DM T =25C 4 Continuous Drain A I A DSM Current T =70C 3 A C Avalanche Current I , I 19 A AS AR C Avalanche energy L=0.1mH E , E 18 mJ AS AR T =25C 20 C P W D B Power Dissipation T =100C 10 C T =25C 2.1 A P W DSM A Power Dissipation T =70C 1.3 A T , T Junction and Storage Temperature Range -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 17.4 30 C/W R JA A D Steady-State Maximum Junction-to-Ambient 50 60 C/W R Maximum Junction-to-Case Steady-State 4 7.5 C/W JC Rev 0: Aug 2009 www.aosmd.com Page 1 of 6 AOD444/AOI444 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V DSS D GS V =48V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1 2.4 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 30 A D(ON) GS DS V =10V, I =12A 47 60 GS D m R Static Drain-Source On-Resistance T =125C 85 100 DS(ON) J m V =4.5V, I =6A 67 85 GS D g Forward Transconductance V =5V, I =20A 14 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 12 A S DYNAMIC PARAMETERS C Input Capacitance 360 450 540 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 40 61 80 pF oss GS DS C Reverse Transfer Capacitance 16 27 40 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.4 2.0 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 7.5 10 nC g Q (4.5V) Total Gate Charge 3.8 5 nC g V =10V, V =30V, I =12A GS DS D Q Gate Source Charge 1.2 nC gs Q Gate Drain Charge 1.9 nC gd t Turn-On DelayTime 4.2 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =2.5, 3.4 ns r GS DS L t R =3 Turn-Off DelayTime GEN 16 ns D(off) t Turn-Off Fall Time 2ns f t I =12A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 27 35 ns Q I =12A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 30 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends on the DSM JA user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Aug 2009 www.aosmd.com Page 2 of 6