AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD464 uses advanced trench technology and V (V) = 105V DS design to provide excellent R with low gate I = 40 A (V =10V) DS(ON) D GS charge. This device is suitable for use in high voltage R < 28 m (V =10V) 20A DS(ON) GS synchronous rectification , load switching and general R < 31 m (V = 6V) DS(ON) GS purpose applications. 100% UIS Tested -RoHS Compliant 100% Rg Tested -Halogen Free* TO-252 D-PAK Bottom View Top View D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 105 V DS Gate-Source Voltage V 25 V GS T =25C 40 Continuous Drain C Current T =100C I 28 A C D C Pulsed Drain Current I 80 DM C Avalanche Current I 20 A AR C Repetitive avalanche energy L=0.1mH E 20 mJ AR T =25C 100 C P W D B Power Dissipation T =100C 50 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.5 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 15 18 C/W R JA A Steady-State Maximum Junction-to-Ambient 45 55 C/W B Steady-State R 1 1.5 C/W Maximum Junction-to-Case JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOD464 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 105 V DSS D GS V =84V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =25V 100 nA GSS DS GS V Gate Threshold Voltage V =V , I =250A 2.5 3.2 4 V GS(th) DS GS D I On state drain current V =10V, V =5V 80 A D(ON) GS DS V =10V, I =20A 21.5 28 GS D m R T =125C Static Drain-Source On-Resistance 32 40 DS(ON) J m V =6V, I =20A 24 31 GS D g Forward Transconductance V =5V, I =20A 50 S FS DS D V Diode Forward Voltage I =1A, V =0V 0.73 1 V SD S GS Maximum Body-Diode Continuous Current I 55 A S DYNAMIC PARAMETERS C Input Capacitance 2038 2445 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 204 pF GS DS oss C Reverse Transfer Capacitance 85 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.3 1.56 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 38.5 46 nC g Q Gate Source Charge V =10V, V =50V, I =20A 8nC GS DS D gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 12.7 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.7, 8.2 ns r GS DS L t R =3 Turn-Off DelayTime 31.5 ns D(off) GEN t Turn-Off Fall Time 11.2 ns f t I =20A, dI/dt=100A/s 59.6 rr Body Diode Reverse Recovery Time F 74 ns Q I =20A, dI/dt=100A/s 161 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. J(MAX) G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005 Alpha & Omega Semiconductor, Ltd. www.aosmd.com