AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology n-channel MOSFETs to provide excellent R and low V (V) = 40V, I = 12A (V =10V) DS(ON) DS D GS gate charge. The complementary MOSFETs may R < 30mW (V =10V) DS(ON) GS be used in H-bridge, Inverters and other R < 40mW (V =4.5V) DS(ON) GS applications. p-channel V (V) = -40V, I = -12A (V =-10V) DS D GS -RoHS Compliant R < 45mW (VGS= -10V) DS(ON) -Halogen Free* R < 66mW (VGS= -4.5V) DS(ON) 100% UIS Tested 100% Rg Tested TO-252-4L D-PAK Top View D1/D2 Bottom View Top View D1/D2 Drain Connected to Tab G1 G2 S1 S2 G2 S2 G1 n-channel p-channel S1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 40 -40 V DS Gate-Source Voltage V 20 20 V GS T =25C 12 -12 Continuous Drain C B,H Current T =100C I 12 -12 C D A B Pulsed Drain Current I 30 -30 DM C Avalanche Current I 14 -20 AR C Repetitive avalanche energy L=0.1mH E 9.8 20 mJ AR T =25C 27 30 C P Power Dissipation W D T =100C 14 15 C T =25C 2 2 A Power Dissipation P W DSM T =70C 1.3 1.3 A Junction and Storage Temperature Range T , T -55 to 175 -55 to 175 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units A,D Maximum Junction-to-Ambient t 10s n-ch 17.4 25 C/W R A,D qJA Maximum Junction-to-Ambient Steady-State n-ch 50 60 C/W C Steady-State R n-ch 4 5.5 C/W Maximum Junction-to-Lead qJC A,D Maximum Junction-to-Ambient t 10s p-ch 16.7 25 C/W R A,D qJA Steady-State Maximum Junction-to-Ambient p-ch 50 60 C/W C Steady-State R p-ch 3.5 5 C/W Maximum Junction-to-Lead qJC Rev5.0: November 2018 www.aosmd.com Page 1 of 9 AOD609 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250mA, V =0V 40 V DSS D GS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current mA DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V =V I =250mA V Gate Threshold Voltage 1.7 2.5 3 V DS GS D GS(th) I On state drain current V =10V, V =5V 30 A GS DS D(ON) V =10V, I =12A 24 30 GS D R Static Drain-Source On-Resistance T =125C 37 46 mW DS(ON) J V =4.5V, I =8A 31 40 GS D V =5V, I =12A g Forward Transconductance 25 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.76 1 V S GS SD H I Maximum Body-Diode Continuous Current 12 A S DYNAMIC PARAMETERS C Input Capacitance 516 650 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 82 pF GS DS oss C Reverse Transfer Capacitance 43 pF rss V =0V, V =0V, f=1MHz R Gate resistance 4.6 6.9 W GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 8.3 10.8 nC g V =10V, V =20V, GS DS Q Gate Source Charge 2.3 nC gs I =12A D Q Gate Drain Charge 1.6 nC gd t Turn-On DelayTime 6.4 ns D(on) t Turn-On Rise Time V =10V, V =20V, R =1.4W, 3.6 ns r GS DS L R =3W t Turn-Off DelayTime 16.2 ns GEN D(off) t Turn-Off Fall Time 6.6 ns f t I =12A, dI/dt=100A/ms 18 24 rr Body Diode Reverse Recovery Time F ns Q I =12A, dI/dt=100A/ms 10 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device in a still air environment with T =25C. The power dissipation P and current rating I are JA A DSM DSM based on T =150C, using the steady state junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse rating. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev5.0: November 2018 www.aosmd.com Page 2 of 9