AON6290 100V N-Channel MOSFET General Description Product Summary V 100V The AON6290 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 85A D GS frequency switching performance. Both conduction and R (at V =10V) < 4.6m W DS(ON) GS switching power losses are minimized due to an R (at V =6V) < 6.2m W DS(ON) GS extremely low combination of R , Ciss and Coss. DS(ON) This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 D S 2 7 S D 3 S 6 D 4 G 5 D G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C 85 Continuous Drain C I D G Current T =100C 67 A C C Pulsed Drain Current I 260 DM T =25C 28 A Continuous Drain I A DSM Current T =70C 23 A C Avalanche Current I 60 A AS C Avalanche energy L=0.1mH E 180 mJ AS T =25C 208 C P W D B T =100C Power Dissipation 83 C T =25C 7.3 A P W DSM A Power Dissipation T =70C 4.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 14 17 C/W R qJA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 0.46 0.6 C/W qJC Rev.3.0: March 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250mA, V =0V BV Drain-Source Breakdown Voltage 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS mA T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA DS GS GSS V =V I =250mA V Gate Threshold Voltage 2.2 2.8 3.4 V GS(th) DS GS, D V =10V, I =20A 3.8 4.6 GS D mW R Static Drain-Source On-Resistance T =125C 6.5 7.9 DS(ON) J V =6V, I =20A 4.7 6.2 mW GS D V =5V, I =20A g Forward Transconductance 70 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 4600 pF iss C Output Capacitance V =0V, V =50V, f=1MHz 415 pF GS DS oss C Reverse Transfer Capacitance 27 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.3 0.75 1.2 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 63 90 nC g Q (4.5V) Total Gate Charge 28.5 40 nC g V =10V, V =50V, I =20A GS DS D Q Gate Source Charge 17 nC gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 14.5 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5W, 5.5 ns r GS DS L R =3W t Turn-Off DelayTime 37 ns GEN D(off) t Turn-Off Fall Time 7.5 ns f t I =20A, dI/dt=500A/ ms rr Body Diode Reverse Recovery Time F 40 ns Q I =20A, dI/dt=500A/ ms nC rr Body Diode Reverse Recovery Charge F 230 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The qJA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150C. The value in any given application DSM qJA depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. qJA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: March 2014 www.aosmd.com Page 2 of 6