AON6407 30V P-Channel MOSFET General Description Product Summary V The AON6407 combines advanced trench MOSFET DS -30 technology with a low resistance package to provide I (at V = -10V) -85A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V = -10V) < 4.5m DS(ON) GS and battery protection applications. R (at V = -6V) < 6.0m DS(ON) GS 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --3300 VV DDSS Gate-Source Voltage V 25 V GS T =25C Continuous Drain -85 C I D G Current T =100C -67 A C C Pulsed Drain Current I -200 DM T =25C -32 A Continuous Drain I A DSM T =70C Current -25.5 A C Avalanche Current I 45 A AS C Avalanche energy L=0.1mH E 101 mJ AS T =25C 83 C P W D B T =100C Power Dissipation 33 C T =25C 7.3 A P W DSM A Power Dissipation T =70C 4.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 14 17 C/W R A D JA Maximum Junction-to-Ambient Steady-State 40 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev 0: Oct. 2011 www.aosmd.com Page 1 of 6 AON6407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =25V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1.6 -2.1 -2.6 V GS(th) DS GS, D I On state drain current V =-10V, V =-5V -200 A GS DS D(ON) V =-10V, I =-20A 3.3 4.5 GS D m R Static Drain-Source On-Resistance T =125C 6.5 DS(ON) 4.9 J V =-6V, I =-20A 4.4 6 m GS D V =-5V, I =-20A g Forward Transconductance 65 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.69 -1 V S GS SD G I Maximum Body-Diode Continuous Current -85 A S DYNAMIC PARAMETERS C Input Capacitance 3505 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 900 pF oss GS DS C Reverse Transfer Capacitance 650 pF rss R Gate resistance V =0V, V =0V, f=1MHz 4.6 9.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 75 105 nC g Q Gate Source Charge V =-10V, V =-15V, I =-20A 13 nC gs GS DS D Q Gate Drain Charge 23 nC gd t Turn-On DelayTime 14 ns D(on) t Turn-On Rise Time 16 ns V =-10V, V =-15V, r GS DS RR ==00..7755,, RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 9944 nnss D(off) L GEN t Turn-Off Fall Time 75 ns f t I =-20A, dI/dt=500A/s 35 rr Body Diode Reverse Recovery Time F ns Q I =-20A, dI/dt=500A/s 75 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C.Maximum UIS current limited by test equipment. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. I J(MAX) AS G. The maximum current rating is package limited. E 2 AS H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct. 2011 www.aosmd.com Page 2 of 6