AON6414A 30V N-Channel MOSFET General Description Product Summary V 30V The AON6414A uses advanced trench technology to DS provide excellent R , low gate charge.This device is DS(ON) I (at V =10V) 30A D GS suitable for use as a high side switch in SMPS and R (at V =10V) < 8m DS(ON) GS general purpose applications. R (at V =4.5V) < 10.5m DS(ON) GS 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GGSS G T =25C 30 C I I T =25C 50 C D Continuous Drain A Current T =100C 30 C C Pulsed Drain Current I 140 DM T =25C 13 A Continuous Drain I A DSM T =70C Current 10 A C Avalanche Current I , I 35 A AS AR C Avalanche energy L=0.05mH E , E 31 mJ AS AR V Spike 100ns V 36 V DS SPIKE T =25C 31 C P W D B T =100C Power Dissipation 12.5 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.5 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 17 21 C/W R A D JA Maximum Junction-to-Ambient Steady-State 44 53 C/W Maximum Junction-to-Case Steady-State R 3.4 4 C/W JC Rev.4.0 March 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V V =V I =250A 1.5 1.95 2.5 V Gate Threshold Voltage GS(th) DS GS D I On state drain current V =10V, V =5V 140 A D(ON) GS DS V =10V, I =20A 6.6 8 GS D m R Static Drain-Source On-Resistance T =125C 9.5 11.4 DS(ON) J V =4.5V, I =20A 8.2 10.5 m GS D g Forward Transconductance V =5V, I =20A 55 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current 35 A S DYNAMIC PARAMETERS C Input Capacitance 920 1150 1380 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 125 180 235 pF GS DS oss C Reverse Transfer Capacitance 60 105 150 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.55 1.1 1.65 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 16 20 24 nC g Q (4.5V) Total Gate Charge 7.6 9.5 11.4 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2 2.7 3.2 nC gs Q Gate Drain Charge 3 5 7 nC gd t Turn-On DelayTime 6.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 2 ns r GS DS L t Turn-Off DelayTime R =3 17 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =20A, dI/dt=500A/s 7 rr Body Diode Reverse Recovery Time F 8.7 10.5 ns Q I =20A, dI/dt=500A/s 11 nC rr Body Diode Reverse Recovery Charge F 13.5 16 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A I. The maximum current rating is limited by silicon COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0 March 2013 www.aosmd.com Page 2 of 6