AON7401 30V P-Channel MOSFET General Description Product Summary V -30V The AON7401 uses advanced trench technology to DS provide excellent R , and ultra-low low gate charge DS(ON) I (at V =-10V) -35A D GS with a 25V gate rating. This device is suitable for use as a R (at V =-10V) < 14m W DS(ON) GS load switch or in PWM applications. R (at V =-6V) < 17m W DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 D S 2 7 S D 3 6 D S 4 5 D G G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 25 V GS T =25C -35 C Continuous Drain I D T =100C Current -23 A C C Pulsed Drain Current I -80 DM T =25C -12 A Continuous Drain I A DSM Current T =70C -9.7 A T =25C 29 C P W D B T =100C Power Dissipation 12 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A D qJA Maximum Junction-to-Ambient Steady-State 60 75 C/W Maximum Junction-to-Lead Steady-State R 3.5 4.2 C/W qJL Rev 4: Mar. 2011 www.aosmd.com Page 1 of 5 AON7401 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250mA, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current mA DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250mA -1.7 -2.2 -3 V GS(th) DS GS D V =-10V, V =-5V I On state drain current -80 A GS DS D(ON) V =-10V, I =-9A 11 14 GS D mW R Static Drain-Source On-Resistance T =125C 16 19 DS(ON) J V =-6V, I =-7A 12.9 17 mW GS D V =-5V, I =-9A g Forward Transconductance 27 S FS DS D I =-1A,V =0V V Diode Forward Voltage -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -25 A S DYNAMIC PARAMETERS C Input Capacitance 2060 2600 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 370 pF oss GS DS C Reverse Transfer Capacitance 295 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.4 3.6 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 30 39 nC g Q Gate Source Charge V =-10V, V =-15V, I =-9A 4.6 nC GS DS D gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 11 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =1.6W, 9.4 ns r GS DS L R =3W t Turn-Off DelayTime 24 ns GEN D(off) t Turn-Off Fall Time 12 ns f t I =-9A, dI/dt=500A/ ms 14 18 rr Body Diode Reverse Recovery Time F ns Q I =-9A, dI/dt=500A/ ms 35 nC Body Diode Reverse Recovery Charge rr F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The qJA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM qJA application depends on the user s specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation P is based on T 150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX)= dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T 150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX)= T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. qJA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T 150C. The SOA curve provides a single pulse rating. J(MAX)= G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Mar. 2011 www.aosmd.com Page 2 of 5