AON7406 30V N-Channel MOSFET General Description Product Summary V 30V The AON7406 uses advanced trench technology and DS design to provide excellent R with low gate charge. DS(ON) I (at V =10V) 25A D GS This device is suitable for use in SMPS and general R (at V =10V) < 17m DS(ON) GS purpose applications. R (at V =4.5V) < 23m DS(ON) GS Typical ESD protection HBM Class 2 RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g DFN 3x3A D Top View Bottom View Top View S D S D S D G G D Pin 1 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C 25 C Continuous Drain I D Current T =100C 15 A C C Pulsed Drain Current I 50 DM T =25C 9 A Continuous Drain I A DSM Current T =70C 7 A C Avalanche Current I , I 19 A AS AR C Avalanche energy L=0.1mH E , E 18 mJ AS AR T =25C 15.5 C P W D B Power Dissipation T =100C 6 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 6.6 8 C/W JC Rev.6.0: July 2013 www.aosmd.com Page 1 of 6 AON7406 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 16V I Gate-Body leakage current 10 A GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 50 A GS DS D(ON) V =10V, I =9A 14 17 GS D m R Static Drain-Source On-Resistance T =125C 20 24 DS(ON) J V =4.5V, I =8A 18 23 m GS D V =5V, I =9A g Forward Transconductance 40 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V S GS SD I Maximum Body-Diode Continuous Current 15 A S DYNAMIC PARAMETERS C Input Capacitance 600 740 888 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 77 110 145 pF oss GS DS C Reverse Transfer Capacitance 50 82 115 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.7 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 12 15 18 nC g Q (4.5V) Total Gate Charge 6 7.5 9 nC g V =10V, V =15V, I =9A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==11..6677,, 33..55 nnss r GS DS L R =3 t Turn-Off DelayTime 19 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =9A, dI/dt=500A/s 6 rr Body Diode Reverse Recovery Time F 8 10 ns Q I =9A, dI/dt=500A/s 14 nC rr Body Diode Reverse Recovery Charge F 18 22 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: July 2013 www.aosmd.com Page 2 of 6