AON7412 30V N-Channel MOSFET General Description Product Summary V 30V The AON7412 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =10V) 16A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =10V) < 20m DS(ON) GS and battery protection applications. R (at V =4.5V) < 28m DS(ON) GS R (at V =4.0V) < 32m DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 G 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 25 V GS T =25C 16 Continuous Drain C I D G Current T =100C 12.5 A C C Pulsed Drain Current I 55 DM T =25C 10 A Continuous Drain I A DSM T =70C Current 8 A C Avalanche Current I 17 A AS C Avalanche energy L=0.1mH E 14 mJ AS T =25C 20.8 C P W D B Power Dissipation T =100C 8.3 C T =25C 3.1 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R A D JA Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 5 6 C/W JC Rev 0: Nov. 2011 www.aosmd.com Page 1 of 6 AON7412 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =25V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1 1.5 2 V GS(th) DS GS D I On state drain current V =10V, V =5V 55 A GS DS D(ON) V =10V, I =10A 16.5 20 GS D m T =125C 23 28 J R Static Drain-Source On-Resistance DS(ON) V =4.5V, I =8A 22 28 GS D V =4.0V, I =7A 24 32 m GS D g Forward Transconductance V =5V, I =10A 25 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 16 A S DYNAMIC PARAMETERS C Input Capacitance 466 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 90 pF GS DS oss C Reverse Transfer Capacitance 61 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3.7 5.6 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 9.3 15 nC g Q (4.5V) Total Gate Charge 4.3 8 nC g V =10V, V =15V, I =10A GS DS D Q Gate Source Charge 1 nC gs Q Gate Drain Charge 2.3 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 55 nnss D(on) t Turn-On Rise Time V =10V, V =15V, R =1.5, 8 ns r GS DS L R =3 t Turn-Off DelayTime 20 ns GEN D(off) t Turn-Off Fall Time 5 ns f t I =10A, dI/dt=500A/s 7.5 rr Body Diode Reverse Recovery Time F ns Q I =10A, dI/dt=500A/s 9.8 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov. 2011 www.aosmd.com Page 2 of 6