AON7444 60V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 60V DS The AON7444 is fabricated with SDMOS trench I (at V =10V) 33A technology that combines excellent R with low gate D GS DS(ON) charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 22m DS(ON) GS with controlled switching behavior. This universal R (at V =4.5V) < 26m DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Top View Bottom 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T =25C 33 C Continuous Drain I D T =100C Current 21 A C C Pulsed Drain Current I 75 DM T =25C 9 A Continuous Drain I A DSM Current T =70C 7 A C Avalanche Current I , I 30 A AS AR C Avalanche energy L=0.1mH E , E 45 mJ AS AR T =25C 42 C P W D B Power Dissipation T =100C 17 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 2.5 3 C/W JC Rev 2: Mar. 2011 www.aosmd.com Page 1 of 7 AON7444 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V DSS D GS V =60V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 20V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 1.5 2 2.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 75 A D(ON) GS DS V =10V, I =9A 18 22 GS D m R Static Drain-Source On-Resistance T =125C 28 34 DS(ON) J V =4.5V, I =8A 20.5 26 m GS D g Forward Transconductance V =5V, I =9A 45 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 40 A S DYNAMIC PARAMETERS C Input Capacitance 1340 1680 2000 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 100 150 195 pF GS DS oss C Reverse Transfer Capacitance 35 60 85 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.9 1.4 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 22 28 34 nC g Q (4.5V) Total Gate Charge 10 13 16 nC g V =10V, V =30V, I =9A GS DS D Q Gate Source Charge 5.5 6.9 8.3 nC gs Q Gate Drain Charge 2 3.7 5 nC gd t Turn-On DelayTime 6 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =3.3, 2.4 ns r GS DS L R =3 t Turn-Off DelayTime 24 ns GEN D(off) t Turn-Off Fall Time 2.7 ns f t I =9A, dI/dt=500A/s 9 rr Body Diode Reverse Recovery Time F 13 17 ns Q I =9A, dI/dt=500A/s 24 nC rr Body Diode Reverse Recovery Charge F 34 44 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM JA application depends on the user s specific board design, and the maximum temperature of 150C may be u sed if the PCB allows it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 7