AON7448 80V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 80V DS The AON7448 is fabricated with SDMOS trench I (at V =10V) 24A technology that combines excellent R with low gate DS(ON) D GS charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 30m DS(ON) GS with controlled switching behavior. This universal R (at V = 8V) < 37m DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g D DFN 3x3 EP Top View Top View Bottom 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 80 V DS Gate-Source Voltage V 25 V GS T =25C 24 C Continuous Drain I D Current T =100C 15 A C C Pulsed Drain Current I 76 DM T =25C 7.1 A Continuous Drain I A DSM Current T =70C 5.7 A C Avalanche Current I , I 25 A AS AR C Avalanche energy L=0.1mH E , E 31 mJ AS AR T =25C 36 C P W D B Power Dissipation T =100C 15 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 2.8 3.4 C/W JC Rev 1: April 2011 www.aosmd.com Page 1 of 7 AON7448 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 80 V DSS D GS V =80V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 2.9 3.5 4.1 V GS(th) DS GS D I On state drain current V =10V, V =5V 78 A D(ON) GS DS V =10V, I =10A 25 30 GS D m R Static Drain-Source On-Resistance T =125C 44 53 DS(ON) J V =8V, I =10A 29 37 m GS D g Forward Transconductance V =5V, I =10A 16 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 40 A S DYNAMIC PARAMETERS C Input Capacitance 720 900 1100 pF iss V =0V, V =40V, f=1MHz C Output Capacitance 75 110 150 pF GS DS oss C Reverse Transfer Capacitance 25 40 60 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 11.5 14.5 17.5 nC g V =10V, V =40V, I =10A Q Gate Source Charge 4.5 5.5 6.5 nC GS DS D gs Q Gate Drain Charge 2.8 4.6 6.5 nC gd t Turn-On DelayTime 16 ns D(on) t Turn-On Rise Time V =10V, V =40V, R =4, 7.5 ns r GS DS L R =3 t Turn-Off DelayTime 36 ns GEN D(off) t Turn-Off Fall Time 7.5 ns f t I =10A, dI/dt=500A/s 10 rr Body Diode Reverse Recovery Time F 15 20 ns Q I =10A, dI/dt=500A/s 30 nC rr Body Diode Reverse Recovery Charge F 43 56 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM JA application depends on the user s specific board design, and the maximum temperature of 150C may be u sed if the PCB allows it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 2 of 7