AON7752 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Integrated Schottky Diode (SRFET) I (at V =10V) 16A D GS Very Low R (on) at 4.5V DS GS R (at V =10V) < 8.2m DS(ON) GS Low Gate Charge R (at V = 4.5V) < 14.5m DS(ON) GS High Current Capability RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP D Top View Bottom View Top View TM SRFET 1 8 Soft Recovery MOSFET: 2 7 Integrated Schottky Diode 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GGSS T =25C 16 Continuous Drain C I D G Current T =100C 12 A C C Pulsed Drain Current I 64 DM T =25C 15 A Continuous Drain I A DSM T =70C Current 12 A C Avalanche Current I 22 A AS C Avalanche energy L=0.05mH E 12 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 20 C P W D B T =100C Power Dissipation 8.3 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A D JA Maximum Junction-to-Ambient Steady-State 60 75 C/W Maximum Junction-to-Case Steady-State R 5 6 C/W JC www.aosmd.com Rev 0 : April 2012 Page 1 of 6 AON7752 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 30 V D GS DSS V =30V, V =0V 0.5 DS GS I Zero Gate Voltage Drain Current mA DSS T =55C 100 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.5 2 2.5 V GS(th) DS GS D V =10V, I =16A 6.8 8.2 GS D m R Static Drain-Source On-Resistance T =125C 9.8 12 DS(ON) J V =4.5V, I =10A 11.6 14.5 m GS D V =5V, I =16A g Forward Transconductance 62 S FS DS D I =0.2A,V =0V V Diode Forward Voltage 0.45 0.65 V SD S GS G I Maximum Body-Diode Continuous Current 16 A S DYNAMIC PARAMETERS C Input Capacitance 605 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 275 pF oss GS DS C Reverse Transfer Capacitance 36.5 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 11 15 nC g Q (4.5V) Total Gate Charge 5.5 8 nC g V =10V, V =15V, I =16A GS DS D Q Gate Source Charge 2 nC gs Q Gate Drain Charge 2.6 nC gd t Turn-On DelayTime 5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.9, 2.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1177 nnss D(off) GEN t Turn-Off Fall Time 3 ns f t I =16A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 11.5 ns Q I =16A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 12.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : April 2012 www.aosmd.com Page 2 of 6