AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary V 100V The AOT290L/AOB290L uses Trench MOSFET DS technology that is uniquely optimized to provide the most I (at V =10V) 140A D GS * efficient high frequency switching performance. Power R (at V =10V) < 3.5m (< 3.2m ) DS(ON) GS losses are minimized due to an extremely low combination of R and C .In addition, switching behavior is well DS(ON) rss controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g TO-263 TO220 2 Top View Bottom View D PAK D Top View Bottom View D D D D G S G D D S G S G S G S AOT290L AOB290L Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 110000 VV DS Gate-Source Voltage V 20 V GS T =25C 140 Continuous Drain C I D G Current T =100C 110 A C C Pulsed Drain Current I 500 DM T =25C 18 A Continuous Drain I A DSM Current T =70C 15 A C Avalanche Current I , I 100 A AS AR C Avalanche energy L=0.1mH E , E 500 mJ AS AR I V Spike 10s V 120 V DS SPIKE T =25C 500 C P W D B T =100C Power Dissipation 250 C T =25C 2.1 A P W DSM A T =70C Power Dissipation 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 12 15 C/W R A D JA Maximum Junction-to-Ambient Steady-State 50 60 C/W Maximum Junction-to-Case Steady-State R 0.25 0.3 C/W JC * Surface mount package TO263 www.aosmd.com Rev.4.0: July 2016 Page 1 of 6 AOT290L/AOB290L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2.9 3.5 4.1 V GS(th) DS GS D I On state drain current V =10V, V =5V 500 A GS DS D(ON) V =10V, I =20A 2.7 3.5 GS D TO220 T =125C 4.4 5.7 J R Static Drain-Source On-Resistance m DS(ON) V =10V, I =20A GS D 2.5 3.2 TO263 g Forward Transconductance V =5V, I =20A 50 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.67 1 V SD S GS G I Maximum Body-Diode Continuous Current 140 A S DYNAMIC PARAMETERS C Input Capacitance 7180 9550 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 2780 3700 pF GS DS oss C Reverse Transfer Capacitance 42 72 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.7 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 90 126 nC g V =10V, V =50V, I =20A Q Gate Source Charge 33 nC GS DS D gs Q Gate Drain Charge 21 nC gd t Turn-On DelayTime 31 69 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==5500VV,, RR ==22..55,, 2244 5533 nnss r GS DS L R =3 t Turn-Off DelayTime 45 99 ns GEN D(off) t Turn-Off Fall Time 27 60 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 65 91 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 460 644 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A I. The spike duty cycle 5% max, limited by junction temperature T =120 C. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: July 2016 www.aosmd.com Page 2 of 6