AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary V The AOT296L/AOB296L uses Trench MOSFET DS 100V I (at V =10V) 70A technology that is uniquely optimized to provide the most D GS * R (at V =10V) < 10m (< 9.7m ) efficient high frequency switching performance. Both DS(ON) GS * R (at V =6V) < 12.5m (< 12.2m ) conduction and switching power losses are minimized DS(ON) GS due to an extremely low combination of R , Ciss and DS(ON) Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g TO-263 TO220 2 D PAK Top View Bottom View D Top View Bottom View D D D D G S G S S D D G G S G S Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 70 C I D G Current T =100C 50 A C C Pulsed Drain Current I 180 DM T =25C 9.5 A Continuous Drain I A DSM Current T =70C 7.5 A C Avalanche Current I 40 A AS C Avalanche energy L=0.1mH E 80 mJ AS T =25C 107 C P W D B Power Dissipation T =100C 54 C T =25C 2.1 A P W DSM A T =70C Power Dissipation 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 12 15 C/W R JA A D Steady-State Maximum Junction-to-Ambient 48 60 C/W Maximum Junction-to-Case Steady-State R 1.1 1.4 C/W JC * Surface mount package TO263 Prelim: Sep. 2012 www.aosmd.com Page 1 of 6 AOT296L/AOB296L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 2.3 2.9 3.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 180 A GS DS D(ON) V =10V, I =20A 8.2 10 GS D m TO220 T =125C 14.2 17.2 J V =6V, I =20A GS D 9.7 12.5 m TO220 R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D 7.9 9.7 m TO263 V =6V, I =20A GS D 9.4 12.2 m TO263 V =5V, I =20A g Forward Transconductance 62 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD G I Maximum Body-Diode Continuous Current 70 A S DYNAMIC PARAMETERS C Input Capacitance 2785 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 238 pF oss GS DS C Reverse Transfer Capacitance 12 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.25 0.55 0.85 g GS DS SWITCHING PARAMETERS QQ TToottaall GGaattee CChhaarrggee 3377 5522 nnCC g(10V) Q Total Gate Charge 16.5 24 nC g(4.5V) V =10V, V =50V, I =20A GS DS D Q Gate Source Charge 11.5 nC gs Q Gate Drain Charge 5 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 8.5 ns r GS DS L R =3 t Turn-Off DelayTime 29 ns GEN D(off) t Turn-Off Fall Time 4 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 35 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 210 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Prelim: Sep. 2012 www.aosmd.com Page 2 of 6