AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 100V The AOT410L/AOB410L is fabricated with SDMOS DS trench technology that combines excellent R with low I (at V =10V) 150A DS(ON) D GS gate charge & low Q .The result is outstanding efficiency rr R (at V =10V) < 6.5m (< 6.2m*) DS(ON) GS with controlled switching behavior. This universal R (at V = 7V) < 7.5m (< 7.2m*) DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g TO-263 TO-220 2 D PAK Top View Bottom View Top View Bottom View D D D D D G G D S G S S S D G S G AOT410L AOB410L Orderable Part Number Package Type Form Minimum Order Quantity AOT410L TO-220 Tube 1000 AOB410L TO-263 Tape & Reel 800 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V 25 V GS T =25C Continuous Drain 150 C I D G Current T =100C 108 A C C Pulsed Drain Current I 405 DM T =25C 12 A Continuous Drain I A DSM Current T =70C 10 A C Avalanche Current I ,I 50 A AS AR C Avalanche energy L=0.1mH E ,E 125 mJ AS AR T =25C 333 C P W D B Power Dissipation T =100C 167 C T =25C 1.9 A P W DSM A Power Dissipation T =70C 1.2 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 12 15 C/W R JA A D Steady-State Maximum Junction-to-Ambient 54 65 C/W Steady-State Maximum Junction-to-Case R 0.35 0.45 C/W JC * Surface mount package TO263 www.aosmd.com Rev.3.0: November 2013 Page 1 of 7 AOT410L/AOB410L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J V =0V, V =25V I Gate-Body leakage current 100 nA GSS DS GS V V =5V I =250A Gate Threshold Voltage 2 3 4 V GS(th) DS , D I On state drain current V =10V, V =5V 405 A GS DS D(ON) V =10V, I =20A 5.1 6.5 GS D m T0220 T =125C 8.8 11 J V =7V, I =20A GS D T0220 5.8 7.5 m R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D m TO263 4.8 6.2 V =7V, I =20A GS D TO263 5.5 7.2 m g Forward Transconductance V =5V, I =20A 70 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.63 1 V SD S GS I Maximum Body-Diode Continuous Current 150 A S DYNAMIC PARAMETERS C Input Capacitance 5290 6622 7950 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 415 594 770 pF GS DS oss C Reverse Transfer Capacitance 130 215 300 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.3 0.64 1 g GS DS SWITCHING PARAMETERS QQ ((1100VV)) TToottaall GGaattee CChhaarrggee 8855 110077 112299 nnCC g Q Gate Source Charge V =10V, V =50V, I =20A 23 28.5 34 nC GS DS D gs Q Gate Drain Charge 24 40 56 nC gd t Turn-On DelayTime 28 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 22 ns r GS DS L R =3 t Turn-Off DelayTime 43.5 ns GEN D(off) t Turn-Off Fall Time 14.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 19 27 35 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 124 177 230 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: November 2013 www.aosmd.com Page 2 of 7