AOTF42S60 TM 600V 39A MOS Power Transistor General Description Product Summary V T 700V The AOTF42S60 have been fabricated using the DS j,max TM I 166A advanced MOS high voltage process that is designed DM to deliver high levels of performance and robustness in R 0.099 DS(ON),max switching applications. Q 40nC g,typ By providing low R , Q and E along with DS(on) g OSS E 400V 9.2J oss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOTF42S60L Top View D TO-220F G S S D G AOTF42S60 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOTF42S60 AOTF42S60L Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C 39* 39* C Continuous Drain I D T =100C Current 25* 25* A C C Pulsed Drain Current I 166 DM C Avalanche Current I 11 A AR C Repetitive avalanche energy E 234 mJ AR G Single pulsed avalanche energy E 1345 mJ AS T =25C 50 37.9 W C P D B o o Power Dissipation Derate above 25 C 0.4 0.3 W/ C MOSFET dv/dt ruggedness 100 dv/dt V/ns H 20 Peak diode recovery dv/dt Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering J purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOTF42S60 AOTF42S60L Units A,D Maximum Junction-to-Ambient R JA 65 65 C/W Maximum Junction-to-Case R 2.5 3.3 C/W JC * Drain current limited by maximum junction temperature. Rev3: Mar 2012 www.aosmd.com Page 1 of 6 AOTF42S60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 - - D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 650 700 - V D GS J V =600V, V =0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =150C - 10 - DS J I Gate-Body leakage current V =0V, V =30V - - 100 n GSS DS GS V V =5V,I =250A Gate Threshold Voltage 2.5 3.2 3.8 V GS(th) DS D V =10V, I =21A, T =25C - 0.085 0.099 GS D J R Static Drain-Source On-Resistance DS(ON) V =10V, I =21A, T =150C - 0.24 0.28 GS D J V Diode Forward Voltage I =21A,V =0V, T =25C - 0.84 - V SD S GS J I Maximum Body-Diode Continuous Current - - 39 A S I Maximum Body-Diode Pulsed Current - - 166 A SM DYNAMIC PARAMETERS C Input Capacitance - 2154 - pF iss V =0V, V =100V, f=1MHz GS DS C Output Capacitance - 135 - pF oss Effective output capacitance, energy C - 103 - pF o(er) H related V =0V, V =0 to 480V, f=1MHz GS DS Effective output capacitance, time C - 344 - pF o(tr) I related V =0V, V =100V, f=1MHz C Reverse Transfer Capacitance - 2.7 - pF GS DS rss V =0V, V =0V, f=1MHz R Gate resistance - 1.7 - g GS DS SWITCHING PARAMETERS Q Total Gate Charge - 40 - nC g Q Gate Source Charge V =10V, V =480V, I =21A - 11.7 - nC GS DS D gs Q Gate Drain Charge - 11.9 - nC gd t Turn-On DelayTime - 38.5 - ns D(on) t Turn-On Rise Time V =10V, V =400V, I =21A, - 53 - ns GS DS D r R =25 t Turn-Off DelayTime G - 136 - ns D(off) t Turn-Off Fall Time - 46 - ns f t I =21A,dI/dt=100A/s,V =400V - 473 rr Body Diode Reverse Recovery Time F DS - ns I I =21A,dI/dt=100A/s,V =400V Peak Reverse Recovery Current - 38.5 rm F DS - A Q I =21A,dI/dt=100A/s,V =400V - 10.5 rr Body Diode Reverse Recovery Charge F DS - C A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. L=60mH, I =6.7A, V =150V, Starting T =25C AS DD J H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Mar 2012 www.aosmd.com Page 2 of 6