AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary V T 750V The AOD7S65 & AOU7S65 & AOI7S65 have been DS j,max TM fabricated using the advanced MOS high voltage I 30A DM process that is designed to deliver high levels of R 0.65 DS(ON),max performance and robustness in switching applications. Q 9.2nC g,typ By providing low R , Q and E along with DS(on) g OSS E 400V 2J oss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g TO252 TO251A TO251 IPAK DPAK D Top View Bottom View Top View Bottom View Top View Bottom View D D G S G S S G G D S D D D G G S S G S AOI7S65 AOU7S65 AOD7S65 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 V GS T =25C 7 C Continuous Drain I D T =100C Current 5 A C C Pulsed Drain Current I 30 DM C Avalanche Current I 1.7 A AR C Repetitive avalanche energy E 43 mJ AR H Single pulsed avalanche energy E 86 mJ AS T =25C 89 W C P D B o o Power Dissipation Derate above 25 C 0.7 W/ C MOSFET dv/dt ruggedness 100 dv/dt V/ns Peak diode recovery dv/dt 20 Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering K purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Typical Maximum Units Symbol A,D R Maximum Junction-to-Ambient JA 45 55 C/W A R Maximum Case-to-sink CS -- 0.5 C/W D,F R 1.1 1.4 C/W Maximum Junction-to-Case JC www.aosmd.com Rev1: Nov 2012 Page 1 of 7 AOD7S65/AOU7S65/AOI7S65 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 650 - - D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 750 - V D GS J V =650V, V =0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS V =520V, T =150C - 10 - DS J I Gate-Body leakage current V =0V, V =30V - - 100 n GSS DS GS V V =5V,I =250A Gate Threshold Voltage 2.6 3.3 4 V GS(th) DS D V =10V, I =3.5A, T =25C - 0.54 0.65 GS D J R Static Drain-Source On-Resistance DS(ON) V =10V, I =3.5A, T =150C - 1.48 1.64 GS D J V Diode Forward Voltage I =3.5A,V =0V, T =25C - 0.82 - V SD S GS J I Maximum Body-Diode Continuous Current - - 7 A S C I Maximum Body-Diode Pulsed Current - - 30 A SM DYNAMIC PARAMETERS C Input Capacitance - 434 - pF iss V =0V, V =100V, f=1MHz GS DS C Output Capacitance - 30 - pF oss Effective output capacitance, energy C - 23 - pF o(er) I related VGS=0V, V =0 to 480V, f=1MHz DS Effective output capacitance, time C - 80 - pF o(tr) J related VGS=0V, V =100V, f=1MHz C Reverse Transfer Capacitance - 1 - pF DS rss V =0V, V =0V, f=1MHz R Gate resistance - 17.5 - g GS DS SWITCHING PARAMETERS Q Total Gate Charge - 9.2 - nC g Q Gate Source Charge V =10V, V =480V, I =3.5A - 2.5 - nC GS DS D gs Q Gate Drain Charge - 2.7 - nC gd t Turn-On DelayTime - 21 - ns D(on) t Turn-On Rise Time V =10V, V =400V, I =3.5A, - 14 - ns GS DS D r R =25 t Turn-Off DelayTime G - 55 - ns D(off) t Turn-Off Fall Time - 15 - ns f t I =3.5A,dI/dt=100A/s,V =400V - 224 rr Body Diode Reverse Recovery Time F DS - ns I I =3.5A,dI/dt=100A/s,V =400V Peak Reverse Recovery Current - 19 rm F DS - A Q I =3.5A,dI/dt=100A/s,V =400V - 2.8 rr Body Diode Reverse Recovery Charge F DS - C A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. L=60mH, I =1.7A, V =150V, Starting T =25C AS DD J I. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. J. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. K. Wave soldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov 2012 www.aosmd.com Page 2 of 7