AOW11S60/AOWF11S60
TM
600V 11A MOS Power Transistor
General Description Product Summary
V @ T 700V
The AOW11S60 & AOWF11S60 have been fabricated DS j,max
TM
using the advanced MOS high voltage process that is I 45A
DM
designed to deliver high levels of performance and
R 0.399
DS(ON),max
robustness in switching applications.
Q 11nC
g,typ
By providing low R , Q and E along with
DS(on) g OSS
E @ 400V 2.7J
oss
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% R Tested
g
TO-262 TO-262F
D
Top View Bottom View Top View Bottom View
G
G
S
G
S
D D
S
D
S
G
D S
G
AOW11S60
AOWF11S60
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol AOW11S60 AOWF11S60 Units
Drain-Source Voltage V 600 V
DS
Gate-Source Voltage V 30 V
GS
T =25C 11 11*
C
Continuous Drain
I
D
Current T =100C 8 8* A
C
C
Pulsed Drain Current I 45
DM
C
Avalanche Current I 2 A
AR
C
Repetitive avalanche energy E 60 mJ
AR
G
Single pulsed avalanche energy E 120 mJ
AS
T =25C 178 28 W
C
P
B D
o
o
Power Dissipation
Derate above 25 C 1.4 0.22 W/ C
MOSFET dv/dt ruggedness 100
dv/dt V/ns
H
20
Peak diode recovery dv/dt
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Maximum lead temperature for soldering
J
purpose, 1/8" from case for 5 seconds
T 300 C
L
Thermal Characteristics
Parameter Symbol AOW11S60 AOWF11S60 Units
A,D
R
Maximum Junction-to-Ambient JA 65 65 C/W
A
R
Maximum Case-to-sink CS 0.5 -- C/W
Maximum Junction-to-Case R 0.7 4.5 C/W
JC
* Drain current limited by maximum junction temperature.
www.aosmd.com
Rev 3: Jan 2012 Page 1 of 6 AOW11S60/AOWF11S60
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
I =250A, V =0V, T =25C
600 - -
D GS J
BV
Drain-Source Breakdown Voltage
DSS
I =250A, V =0V, T =150C 650 700 - V
D GS J
V =600V, V =0V
- - 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
V =480V, T =150C - 10 -
DS J
I Gate-Body leakage current V =0V, V =30V - - 100 n
GSS DS GS
V V =5V,I =250A
Gate Threshold Voltage 2.8 3.5 4.1 V
GS(th) DS D
V =10V, I =3.8A, T =25C - 0.35 0.399
GS D J
R Static Drain-Source On-Resistance
DS(ON)
V =10V, I =3.8A, T =150C
- 0.98 1.11
GS D J
V Diode Forward Voltage I =5.5A,V =0V, T =25C - 0.84 - V
SD S GS J
I Maximum Body-Diode Continuous Current - - 11 A
S
C
I Maximum Body-Diode Pulsed Current - - 45 A
SM
DYNAMIC PARAMETERS
C Input Capacitance - 545 - pF
iss
V =0V, V =100V, f=1MHz
GS DS
C Output Capacitance - 37.3 - pF
oss
Effective output capacitance, energy
C
- 30.8 - pF
o(er)
H
related
V =0V, V =0 to 480V, f=1MHz
GS DS
Effective output capacitance, time
C - 93.6 - pF
o(tr)
I
related
V =0V, V =100V, f=1MHz
C Reverse Transfer Capacitance - 1.42 - pF
GS DS
rss
V =0V, V =0V, f=1MHz
R Gate resistance - 16.5 -
g GS DS
SWITCHING PARAMETERS
Q Total Gate Charge - 11 - nC
g
Q Gate Source Charge V =10V, V =480V, I =5.5A - 2.8 - nC
GS DS D
gs
Q Gate Drain Charge - 3.8 - nC
gd
t Turn-On DelayTime - 20 - ns
D(on)
t Turn-On Rise Time V =10V, V =400V, I =5.5A, - 20 - ns
GS DS D
r
R =25
t Turn-Off DelayTime G - 59 - ns
D(off)
t Turn-Off Fall Time - 20 - ns
f
t I =5.5A,dI/dt=100A/s,V =400V - 250
rr Body Diode Reverse Recovery Time F DS - ns
I I =5.5A,dI/dt=100A/s,V =400V
Peak Reverse Recovery Current - 21
rm F DS - A
Q I =5.5A,dI/dt=100A/s,V =400V - 3.3
rr Body Diode Reverse Recovery Charge F DS - C
A. The value of R is measured with the device in a still air environment with T =25C.
JA A
B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
D J(MAX)
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T
J(MAX) J
=25C.
D. The R is the sum of the thermal impedance from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g.
J(MAX)
G. L=60mH, I =2A, V =150V, Starting T =25C
AS DD J
H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS (BR)DSS.
I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V
o(tr) oss DS (BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Jan 2012 www.aosmd.com Page 2 of 6