Product Information

MMBT5551

MMBT5551 electronic component of AnBon

Datasheet
Transistors (NPN/PNP) SOT-23 RoHS
Manufacturer: AnBon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0195 ea
Line Total: USD 0.39

2463 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
310 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 20
Multiples : 20

Stock Image

MMBT5551
AnBon

20 : USD 0.0253
200 : USD 0.0208
600 : USD 0.0183
3000 : USD 0.0144
9000 : USD 0.0132
21000 : USD 0.0125

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
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Additional Infomation About Product

The MMBT5551 is a PNP BJT (bipolar junction transistor) manufactured by AnBon in the SOT-23 RoHS package. It is a small signal switching transistor characterized by its low collector-emitter saturation voltage, low noise figure, and low power dissipation. The MMBT5551 features integrated base and collector resistors, making it a stable and easy to use transistor for switching and amplification applications. It is capable of operating over a wide range of collector currents (1 to 130mA) and has an operating temperature range of -55°C to 150°C. This device is also RoHS compliant which makes it an excellent choice for use in a variety of electronics designs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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