MMBT5551 LGE

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X-On Electronics has gained recognition as a prominent supplier of MMBT5551 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551 Bipolar Transistors - BJT are a product manufactured by LGE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	MMBT5551
Manufacturer:	LGE
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-23 RoHS
Datasheet:	MMBT5551 Datasheet (PDF)

Price (USD)

20: USD 0.0396 ea
Line Total: USD 0.79

Availability : 6324

Ship by Thu. 23 Oct to Wed. 29 Oct

Qty Unit Price
20 $ 0.0396
200 $ 0.0312
600 $ 0.0268
3000 $ 0.0146
9000 $ 0.013
21000 $ 0.012

MMBT5551 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 6324

Ship by Thu. 23 Oct to Wed. 29 Oct

MOQ : 20
Multiples : 20

Qty Unit Price
20 $ 0.0396
200 $ 0.0312
600 $ 0.0268
3000 $ 0.0146
9000 $ 0.013
21000 $ 0.012

Specifications

Manufacturer

LGE LGE

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 SOT - 23

Brand Category

Lge Lge

Collector Cut-Off Current Icbo

50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo

160 V 160 V

Power Dissipation Pd

350 mW 350 mW

Collector Current Ic

600 mA 600 mA

Dc Current Gain Hfe@Ic Vce

100@10 mA , 5V 100@10 mA , 5V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Transistor Type

NPN NPN

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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We are delighted to provide the MMBT5551 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT5551 is a Transistor (NPN/PNP) SOT-23 RoHS manufactured by LG Electronics. It has a voltage rating of up to 400V and a power dissipation of 200mW. It can be used for switching and amplifying electronic signals and has an efficient on and off state. This transistor is designed for surface mount applications and meets the RoHS standard for protection of the environment.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
20	$ 0.0396
200	$ 0.0312
600	$ 0.0268
3000	$ 0.0146
9000	$ 0.013
21000	$ 0.012

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Image	Part-Description
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Image	Part-Description
Hot	KSP05TA Bipolar (BJT) Transistor NPN 60 V 500 mA 100MHz 625 mW Through Hole TO-92-3 Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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