SI2309S Bourne

SI2309S electronic component of Bourne
SI2309S Bourne
SI2309S MOSFETs
SI2309S  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2309S MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2309S MOSFETs are a product manufactured by Bourne. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2309S
Manufacturer: Bourne
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: SI2309S Datasheet (PDF)
Price (USD)
10: USD 0.0854 ea
Line Total: USD 0.85 
Availability : 17751
  
Ship by Fri. 21 Nov to Thu. 27 Nov
QtyUnit Price
10$ 0.0854
100$ 0.0756
300$ 0.0531
3000$ 0.0405
6000$ 0.0386
9000$ 0.0377

Availability 17751
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0854
100$ 0.0756
300$ 0.0531
3000$ 0.0405
6000$ 0.0386
9000$ 0.0377

   
Manufacturer
Product Category
Package
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2309S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2309S and other electronic components in the MOSFETs category and beyond.

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ElectronicsThe SI2309S is an SOT-23 MOSFET manufactured by Bourne Electronics that is RoHS compliant. It is a dual N-channel enhancement mode MOSFET with low on-resistance. The device is specifically designed to operate from 2.7V to 5.5V and is capable of providing a continuous drain current up to 172mA. This is the ideal device for extremely efficient DC-DC switch mode power supplies and can be used in various applications, such as small size dc motors, LEDs and LCDs. The device is also designed with superior ESD protection to deliver a reliable solution in rugged operating environment.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Bourne Semicon (Shenzhen)
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