2N3440 PBFREE Central Semiconductor

2N3440 PBFREE electronic component of Central Semiconductor
2N3440 PBFREE Central Semiconductor
2N3440 PBFREE Bipolar Transistors - Pre-Biased
2N3440 PBFREE  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N3440 PBFREE Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. 2N3440 PBFREE Bipolar Transistors - Pre-Biased are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. 2N3440 PBFREE
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 250V 1A 3-Pin TO-39 Box
Datasheet: 2N3440 PBFREE Datasheet (PDF)
Price (USD)
127: USD 2.0559 ea
Line Total: USD 261.1 
Availability : 839
  
Ship by Mon. 01 Dec to Fri. 05 Dec
QtyUnit Price
127$ 2.0559
170$ 1.537
500$ 1.1981

Availability 839
Ship by Mon. 01 Dec to Fri. 05 Dec
MOQ : 127
Multiples : 1
QtyUnit Price
127$ 2.0559
170$ 1.537
500$ 1.1981


Availability 839
Ship by Mon. 01 Dec to Fri. 05 Dec
MOQ : 127
Multiples : 1
QtyUnit Price
127$ 2.0559

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Packaging
Brand
Number Of Elements
Emitter-Base Voltage
Power Dissipation
Frequency
Operating Temperature Classification
Collector Current Dc
Rad Hardened
Collector-Base Voltage
Operating Temp Range
Dc Current Gain
Collector-Emitter Voltage
Pin Count
Category
Package Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3440 PBFREE from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3440 PBFREE and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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2N3439 2N3440 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3439 and 2N3440 are silicon NPN transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3439 2N3440 UNITS A Collector-Base Voltage V 450 300 V CBO Collector-Emitter Voltage V 350 250 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 1.0 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =360V (2N3439) 20 A CBO CB I V =250V (2N3440) 20 A CBO CB I V =300V (2N3439) 20 A CEO CE I V =200V (2N3440) 50 A CEO CE I V=6.0V 20 A EBO EB BV I =50mA (2N3439) 350 V CEO C BV I =50mA (2N3440) 250 V CEO C V I =50mA, I=4.0mA 0.5 V CE(SAT) C B V I =50mA, I=4.0mA 1.3 V BE(SAT) C B h V =10V, I =2.0mA (2N3439) 30 FE CE C h V =10V, I=20mA 40 160 FE CE C f V =10V, I =10mA, f=5.0MHz 15 MHz T CE C C V =10V, I =0, f=1.0MHz 10 pF ob CB E C V =5.0V, I =0, f=1.0MHz 75 pF ib EB C R1 (1-May 2013)2N3439 2N3440 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (1-May 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
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