2N4033 www.centralsemi.com PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Power Dissipation P 1.25 W D Power Dissipation (T=25C) P 7.0 W C D Operating and Storage Junction Temperature T T -65 to +200 C J, stg Thermal Resistance 140 C/W JA Thermal Resistance 20 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 50 nA CBO CB I V =60V, T=150C 50 A CBO CB A I V=5.0V 10 A EBO EB BV I=10A 80 V CBO C BV I=10mA 80 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.15 V CE(SAT) C B V I =500mA, I=50mA 0.50 V CE(SAT) C B V I =150mA, I=15mA 0.90 V BE(SAT) C B V V =0.5V, I=500mA 1.10 V BE(ON) CE C h V =5.0V, I=0.1mA 75 FE CE C h V =5.0V, I=100mA 100 300 FE CE C h V =5.0V, I=500mA 70 FE CE C h V =5.0V, I=1.0A 25 FE CE C f V =10V, I=50mA 100 400 MHz T CE C C V =10V, I =0, f=1.0MHz 20 pF ob CB E C V =0.5V, I =0, f=1.0MHz 110 pF ib EB C t I =500mA, I=50mA 100 ns on C B1 t I =500mA, I =I=50mA 350 ns s C B1 B2 t I =500mA, I =I=50mA 50 ns f C B1 B2 R1 (15-March 2012)2N4033 PNP SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (15-March 2012) www.centralsemi.com