2N6298 2N6299 PNP 2N6300 2N6301 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE 2N6298 2N6299 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6300 2N6301 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 8.0 A C Peak Collector Current I 16 A CM Continuous Base Current I 120 mA B Power Dissipation P 75 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 2.33 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V=1.5V 0.5 mA CEV CE CEO BE I V =Rated V , V =1.5V, T=150C 5.0 mA CEV CE CEO BE C I V =Rated V 0.5 mA CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA (2N6298, 2N6300) 60 V CEO C BV I =100mA (2N6299, 2N6301) 80 V CEO C V I =4.0A, I=16mA 2.0 V CE(SAT) C B V I =8.0A, I=80mA 3.0 V CE(SAT) C B V I =8.0A, I=80mA 4.0 V BE(SAT) C B V V =3.0V, I=4.0A 2.8 V BE(ON) CE C h V =3.0V, I=4.0A 750 18K FE CE C h V =3.0V, I=8.0A 100 FE CE C h V =3.0V, I =3.0A, f=1.0kHz 300 fe CE C f V =3.0V, I =3.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN types) 200 pF ob CB E C V =10V, I =0, f=100kHz (PNP types) 300 pF ob CB E R3 (2-September 2014)2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (2-September 2014) www.centralsemi.com