Product Information

1N5404-G

1N5404-G electronic component of Comchip

Datasheet
Rectifiers VR=400V, IO=3A

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2818 ea
Line Total: USD 0.28

9857 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9857 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

1N5404-G
Comchip

1 : USD 0.2818
10 : USD 0.2174
100 : USD 0.1368
500 : USD 0.1299
1200 : USD 0.1

57036 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6000
Multiples : 1200

Stock Image

1N5404-G
Comchip

6000 : USD 0.4365
14400 : USD 0.4278

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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General Purpose Silicon Rectifiers 1N5400-G Thru. 1N5408-G Voltage: 50 to 1000 V Current: 3.0 A RoHS Device DO-27 (DO-201AD) Features -Low forward voltage drop. -High reliability. 0.052(1.32) DIA. -High current capability. 0.048(1.22) 1.000(25.40) Min. -High surge current capability. 0.375(9.53) Mechanical data 0.335(8.51) -Case: Molded plastic 0.220(5.60) DIA. 0.197(5.00) -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode end 1.000(25.40) Min. -Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 1.2 grams Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Parameter Symbol Unit -G -G -G -G -G -G -G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 3.0 A .375(9.5mm) Lead length TA=75C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 200 A (JEDEC method) Maximum instantaneous forward voltage 3.0A VF 1.0 V TJ=25C 5.0 Maximum DC reverse current A IR at rated DC blocking voltage TJ=100C 100 Typical thermal resistance (Note 1) R JA 18 C/W Operating temperature range TJ -65 to +125 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Thermal resistance from junction to ambient 0.375 (9.5mm) lead length. REV:A QW-BG015 Page 1General Purpose Silicon Rectifiers Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G) Fig.1 - Maximum Forward Current Fig.2 - Typical Instantaneous Forward Derating Curve Characteristics Per Bridge Element 3.0 100 10 2.0 1 1.0 0.1 Single phase half wave 60Hz TJ =25C Resistive or inductive load Pulse width=300us 0.375 (9.5mm) lead length 1% Duty cycle 0 0.01 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature, (C) Instantaneous Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Forward Fig.4 - Typical Reverse Characteristics Surge Curren Per Bridge Element Per Bridge Element 200 10.0 TJ=100C 100 1.0 50 0.1 TJ=25C 8.3ms single half sine-wave (JEDEC Method) 0.01 10 1 10 100 0 20 40 60 80 100 120 140 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage, (V) REV:A QW-BG015 Page 2 Peak Forward Surge Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Forward Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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