Product Information

ACPDQC3V3R-HF

ACPDQC3V3R-HF electronic component of Comchip

Datasheet
18V Clamp 2A (8/20µs) Ipp Tvs Diode Surface Mount 0402C/SOD-923F

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3875 ea
Line Total: USD 0.39

4636 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4529 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.3301
10 : USD 0.2289
100 : USD 0.1092
1000 : USD 0.0644
5000 : USD 0.0529
10000 : USD 0.0449
25000 : USD 0.0425
50000 : USD 0.0403
100000 : USD 0.0379

     
Manufacturer
Product Category
Series
Package / Case
Packaging
Part Status
Type
Bidirectional Channels
Voltage - Reverse Standoff Typ
Voltage - Breakdown Min
Voltage - Clamping Max Ipp
Current - Peak Pulse 10/1000 S
Power - Peak Pulse
Power Line Protection
Applications
Capacitance Frequency
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif

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SMD ESD Protection Diode ACPDQC3V3R-HF RoHS Device Halogen Free Features 0402C/SOD-923F - Bi-directional ESD protection. 0.041(1.05) - Surface mount package. 0.037(0.95) - Ultra small SMD package:0402C. - High component density. 0.026(0.65) 0.022(0.55) - AEC-Q101 Qualied Mechanical data 0.022(0.55) 0.018(0.45) - Case: 0402C/SOD-923F standard package, molded plastic. 0.001(0.02) Max. - Terminals: Gold plated, solderable per 0.026(0.65) BSC. MIL-STD-750,method 2026. - Mounting position: Any. 0.022(0.55) 0.018(0.45) - Weight: 0.001 grams (approx.). 0.012(0.30) 0.008(0.20) Circuit Diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak pulse power TP = 8/20s PPP 36 W IEC 61000-4-2(air) ESD 15 ESD capability kV IEC 61000-4-2(contact) ESD 8 Operating temperature range Tj -55 ~ +150 C Storage temperature range TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Typ Parameter Conditions Symbol Min Max Unit Working peak reverse voltage VRWM 3.3 V Diode breakdown voltage IR = 1mA VBR 5 V Leakage current VR = 3.3V IR 1 A IPP = 1A, TP = 8/20s VC 15.5 V Clamping voltage IPP = 2A, TP = 8/20s VC 18 V Junction capacitance VR = 0V, f = 1MHz CT 18 pF Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-G7023 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Rating and Characteristic Curves (ACPDQC3V3R-HF) Fig.1 - 8/20s Peak Pulse Current Fig.2 - Capacitance Between Terminals Characteristics Wave Form Acc. IEC 61000-4-5 21 120% Test Waveform parameters Ta=25C tf=8s Peak Valur Ipp td=20s 100% 19 -t 80% e 17 60% 15 40% td= t Ipp /2 13 20% 11 0% 0 1 2 3 4 0 5 10 15 20 25 30 Time, (s) Reverse Voltage, (V) Fig.3 - Clamping Voltage Vs. Fig.4 - Power Rating Derating Curve Peak Pulse Current 19 110 Mounting on glass epoxy PCBs 18 100 17 80 16 60 15 40 14 Waveform Parameters: 20 13 tr=8s td=20s 0 12 0 1 2 3 0 25 50 75 100 125 150 Peak Pulse Current, (A) Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-G7023 Page 2 Comchip Technology CO., LTD. Clamping Voltage, (V) Percentage Of Ipp Power Rating, (%) Capacitance Between Terminals, (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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