Product Information

6A02B-G

6A02B-G electronic component of Comchip

Datasheet
Rectifiers DIODE GEN PURP 200V 6A R6

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5739 ea
Line Total: USD 0.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1

Stock Image

6A02B-G
Comchip

1000 : USD 0.2613
2000 : USD 0.2586
2500 : USD 0.256
3000 : USD 0.2535
4000 : USD 0.251
5000 : USD 0.2485
10000 : USD 0.246
20000 : USD 0.2435
50000 : USD 0.2411

0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

6A02B-G
Comchip

1 : USD 0.5739
10 : USD 0.4876
100 : USD 0.3439
600 : USD 0.2749
1000 : USD 0.2323
2600 : USD 0.2289
10000 : USD 0.2289

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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General Purpose Silicon Rectifiers 6A005-G Thru. 6A10-G Voltage: 50 to 1000 V Current: 6.0 A RoHS Device R-6 Features -Diffused Junction. -Low forward voltage drop. 1.000(25.40) Min. -Low reverse leakage current. -High current capability. 0.360(9.10) Mechanical data 0.340(8.60) -Epoxy: UL 94V-0 rate flame retardant 0.360(9.10) 0.340(8.60) -Case: JEDEC R-6 molded plastic 1.000(25.40) Min. -Polarity: Color band denotes cathode -Weight: 0.07ounce, 2.0 grams -Mounting position: Any 0.052(1.30) 0.048(1.20) Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol Parameter 6A005-G 6A01-G 6A02-G 6A04-G 6A06-G 6A08-G 6A10-G Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V VDC Maximum DC blocking voltage 50 100 200 400 600 800 1000 V Maximum average forward rectified current I(AV) A 6.0 0.375 (9.5mm) lead length TA=60C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 300 A (JEDEC method) Maximum forward voltage at 6.0A DC VF 1.0 V TJ=25C IR 10 Maximum reverse current A at rated DC blocking voltage TJ=100C IR 100 Typical junction capacitance (Note 1) CJ 100 pF Typical thermal resistance (Note 2) R JA 10 C/W Operating temperature range TJ -55 ~ +150 C Storage temperature range TSTG -55 ~ +150 C NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0Volts. 2. Thermal resistance from junction to ambient . Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BG014 Page 1General Purpose Silicon Rectifiers RATING AND CHARACTERISTIC CURVES (6A005-G Thru. 6A10-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Surge Current 6.0 400 Pulse width 8.3mS single half sine- wave (JEDEC Method) 300 4.0 200 2.0 100 Single phase Half wave, 60Hz Resistive or inductive load 0 0 0 25 50 75 100 125 150 0 10 100 Ambient Temperature, (C) Number of Cycles at 60Hz Fig.3 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 1000 1000 100 TJ=25C 100 10 1.0 TJ=25C f=1MHz Pulse width=300us 10 0.1 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Reverse Voltage, (V) Instantaneous Forward Voltage, (V) REV:B QW-BG014 Page 2 Capacitacne, (pF) Average Forward Current, (A) Instantaneous Forward Current, (A) Peak Forward Surge Current, (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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