General Purpose Silicon Rectifiers A1N5404G-G Voltage: 400 V Current: 3.0 A RoHS Device DO-27 Features - Glass passivated rectifiers. - Low forward voltage drop. 0.051(1.30) DIA. 0.047(1.20) - Low reverse leakage current. 0.984(25.00) Min. - High current capability. - Comply with AEC-Q101 0.374(9.50) 0.335(8.50) Mechanical data 0.220(5.60) DIA. 0.197(5.00) - Case: JEDEC DO-27 molded plastic. 0.984(25.00) Min. - Epoxy: UL 94V-0 rate flame retardant. - Polarity: Color band denotes cathode. - Mounting position: Any. Dimensions in inches and (millimeter) - Weight: 1.1 grams. Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Parameter A1N5404G-G Unit Maximum recurrent peak reverse voltage VRRM 400 V Maximum RMS voltage VRMS 280 V Maximum DC blocking voltage VDC 400 V Maximum average forward IF(AV) 3.0 A TA=55C rectified current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 125 A (JEDEC method) Maximum forward voltage 3.0A DC VF 1.1 V TJ=25C Maximum DC reverse current 5.0 A IR at rated DC blocking voltage TJ=100C 200 Typical junction capacitance (Note 1) pF CJ 50 Typical thermal resistance (Note 2) R JA 15 C/W Operating temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance junction to ambient. Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-BG002 Page 1 Comchip Technology CO., LTD.General Purpose Silicon Rectifiers Rating and Characteristic Curves (A1N5404G-G) Fig.1 - Forward Current Derating Curve Fig.2 - Max. Non-repetitive Surge Current 200 3.0 Pulse width 8.3ms single half sine-wave 2.5 (JEDEC Method) 150 2.0 100 1.5 1.0 50 0.5 Single phase half wave 60Hz Resistive or inductive load 0 0 0 25 50 75 100 125 150 1 10 100 Ambient Temperature, (C) Number of Cycles at 60Hz Fig.3 - Typical Junction Capacitance Fig.4 - Typical Forward Characteristics 100 100 10 10 1 TJ=25C TJ =25C f=1MHz Pulse width=300 s 1 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Reverse Voltage, (V) Instantaneous Forward Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-BG002 Page 2 Comchip Technology CO., LTD. Capacitance, (pF) Average Forward Current, (A) Instantaneous Forward Current, (A) Peak Forward Surge Current, (A)