SMD Schottky Barrier Rectifiers ACDBAT320-HF Thru. ACDBAT3100-HF Forward current: 3.0A Reverse voltage: 20 to 100V RoHS Device Halogen Free 2010 0.181(4.60) Features 0.173(4.40) - Lead less chip form, no lead damage. x0.020(x0.50) 0.091(2.30) - Low power loss, High efficiency. 0.083(2.10) - High current capability, low VF - Plastic package has UL 94V-0. - Comply with AEC-Q101 0.045(1.15) 0.045(1.15) 0.030(0.75) 0.030(0.75) 0.046(1.16) Mechanical Data 0.034(0.86) - Case: Packed with FRP substrate and epoxy underfilled. - Terminals: Pure Tin plated (Lead-Free),solderable Dimensions in inches and (millimeter) per MIL-STD-750, method 2026. - Polarity: Laser cathode band marking. Circuit Diagram - Weight: 0.02 grams (approx). Maximum Ratings (At Ta=25C, unless otherwise noted) Symbol Parameter ACDBAT320-HF ACDBAT340-HF ACDBAT360-HF ACDBAT3100-HF Unit Non-repetitive peak reverse voltage VRM 20 40 60 100 V Average forward current IF(AV) 3 A Peak forward surge current IFSM 80 A 8.3ms single half sine-wave Operating junction temperature range TJ -55 to +125 -55 to +150 C Storage temperature TSTG -55 ~ +150 C Electrical Characteristics (At Ta=25C, unless otherwise noted) Symbol Parameter Conditions Type Min. Typ. Max. Unit - - IF=1.0A ACDBAT320-HF 0.37 - 0.50 IF=3.0A ACDBAT340-HF 0.46 - - IF=1.0A 0.42 - ACDBAT360-HF VF V IF=3.0A 0.58 0.70 Forward voltage (Note1) - IF=1.0A 0.58 - ACDBAT3100-HF 0.85 IF=3.0A 0.75 - Reverse peak reverse current - VR=Max.VRRM, Ta=25C IRRM 0.02 0.2 mA Junction capacitance Cj - - pF VR=4V, f=1.0MHz 120 - - Junction to ambient (Note 2) R JA 86 C/W Thermal resistance - - Junction to lead (Note 2) R JL 24 C/W Notes: (1) Pulse test width pw=300usec, 1% duty cycle. (2)Mounted on P.C. board with 0.2*0.2(5.0*5.0mm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JB001 Page 1 Comchip Technology CO., LTD.ACDBAT320-HF Thru. ACDBAT340-HF ACDBAT360-HF Thru. ACDBAT3100-HF SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (ACDBAT320-HF Thru. ACDBAT3100-HF) Fig.1- Typical Forward Current Derating Curve Fig.2- Maximum Non-Repetitive Peak Forward Surge Current 3.0 80 8.3ms Single Half Sine-Wave 70 60 2.0 50 40 30 1.0 20 Resistive or inductive load 10 P.C.B Mounted on 0.2*0.2(5.0*5.0mm) Copper pad areas 0 0 10 10 0 0 25 50 75 100 125 150 175 1 Case Temperature, (C) Number of Cycles at 60Hz Fig.3- Typical Instantaneous Forward Fig.4- Typical Reverse Characteristics Characteristics 10 100 10 1.00 o TJ=100 C 1.0 0.10 0.1 o 0.01 TJ=25 C 0.01 ACDBAT320-HF Thru. 340-HF ACDBAT360-HF ACDBAT3100-HF 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 Instantaneous forward voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5- Typical Junction Capacitance 500 O TJ=25 C f=1MHz Vsig=50mVP-P 100 10 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JB001 Page 2 Comchip Technology CO., LTD. Ta=25C Junction Capacitance, (pF) Instantaneous forward current, (A) Average Forward Rectified Current, (A) Instantaneous Reverse Voltage, (mA) Peak Forward Surge Current, (A)