Low Profile SMD Schottky Barrier Rectifiers ACDBMT140-HF Thru. ACDBMT1200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features -Excellent power dissipation of fers better reverse leakage current and thermal resistance. 0.146(3.7) -Low profile surface mounted application in order 0.130(3.3) 0.018(0.45) to optimize board space. 0.006(0.15) -Low power loss, high efficiency. -High current capability, low forward voltage drop. 0.071(1.8) 0.055(1.4) -High surge capability. -Guarding for overvoltage protection. -Ultra high-speed switching. 0.006(0.15) 0.002(0.05) -Silicon epitaxial planar chip, metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 -Comply with AEC-Q101. 0.040(1.0) 0.024(0.6) Mechanical data 0.035(0.9) 0.035(0.9) 0.028(0.7) 0.028(0.7) -Epoxy: UL94-V0 rated flame retardant. -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) -Mounting Position: any -Weight: 0.011 grams approx. Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) ACDBMT ACDBMT ACDBMT ACDBMT ACDBMT Parameter Symbol Units 140-HF 160-HF 1100-HF 1150-HF 1200-HF Repetitive peak reverse voltage VRRM 40 60 100 150 200 V RMS voltage VRMS 28 42 70 105 140 V Continuous reverse voltage VR 40 60 100 150 200 V Max. forward voltage 0.50 0.70 0.85 0.90 0.92 VF V I=1.0AF Operating Temperature TJ -55 to +125 -55 to +150 C Symbol Parameter Conditions MIN. TYP. MAX. Units Forward rectified current see Fig.1 IO 1.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 30 A on rate load (JEDEC method) VR =VRRM TJ=25C IR 0.5 mA Reverse Current VR =VRRM TJ=100C IR 10 mA 40 Thermal resistance Junction to case R JC C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 120 pF Storage temperature TSTG -65 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV: A AQW-JB003 Page 1 Comchip Technology CO., LTD.ACDBMT160-HF ~ ACDBMT1200-HF ACDBMT140-HF Low Profile SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (ACDBMT140-HF Thru. ACDBMT1200-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 100 1.2 10 1.0 0.8 1 0.6 0.4 0.1 TJ=25C 0.2 Pulse Width 300US 1% Duty Cycle 0 0.01 20 40 60 80 100 120 140 160 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Lead Temperature, (C) Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 30 350 O TJ=25 C 8.3ms single half sine wave, JEDEC method 300 25 250 20 200 15 150 10 100 5 50 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics 100 10 1 O TJ=75 C 0.1 O TJ=25 C 0.01 0 40 80 120 160 200 Percent of Rated Peak Reverse Voltage, (%) REV: A AQW-JB003 Page 2 Comchip Technology CO., LTD. ACDBMT140-HF ACDBMT1150-HF ~ 1200-HF ACDBMT1100-HF ACDBMT160-HF Peak Forward Surge Current, (A) Reverse Leakage Current, (mA) Average Forward Current, (A) Junction Capacitance, (pF) Instantaneous Forward Current, (A)