SMD Schottky Barrier Diode B0540W-HF RoHS Device Halogen Free Features - Low forward voltage drop. SOD-123 - Guard ring construction for transient protection. 0.112(2.85) 0.100(2.55) - High conductance. 0.024(0.60) 0.069(1.75) 0.057(1.45) 0.020(0.50) 0.152(3.85) Mechanical data 0.140(3.55) - Case: Molded plastic, SOD-123. 0.006(0.15) - Molding compound, UL ammability 0.002(0.05) classication rating 94V-0. 0.051(1.30) 0.039(1.00) - Terminals: Tin plated leads, solderable per MIL-STD-202, method 208. 0.004(0.10) 0.018(0.45) 0.001(0.02) 0.010(0.25) - Polarity: Cathode line denotes the cathode end. Dimensions in inches and (millimeter) Circuit Diagram Cathode Anode Maximum Rating (at Ta=25C unless otherwise noted) Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 40 V RMS reverse voltage VRMS 28 V Average rectied output current IO 0.5 A Peak forward surge current , 8.3ms single half-sine-wave IFSM 10 A Power dissipation PD 500 mW Typical thermal resistance per leg (Note 1) R JA 250 C/W Operating junction temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Note: 1. Part mounted on FR-4 board with recommended pad layout. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB105 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Min Max Unit IF = 0.5A 0.51 Forward voltage (Note 1) VF V IF = 1A 0.62 VR = 20V 10 Max. peak reverse current (Note 2) A IR VR = 40V 20 Capacitance between terminals CT VR = 0V, f = 1MHz 170 pF Reverse recovery time IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 ns trr 4 Notes: 1. Pulse width 380s, duty cycle < 2%. 2. Pulse test, tp 5ms. Rating and Characteristic Curves (B0540W-HF) Fig.1 - Typical Reverse Characteristic Fig.2 - Typical Forward Characteristic 20000 10000 TA=150C 1000 TA=150C 2000 TA=125C TA=125C TA=25C 100 TA=100C 200 TA=75C 10 TA=75C 20 TA=100C 1 TA=25C 2 0.1 0.2 0.01 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 Reverse Voltage, VR (V) Forward Voltage, VF (mV) Fig.3 - Capacitance vs Reverse Voltage Fig.4 - Derating Curve (PD-TA) 150 550 TA=25C 500 f=1MHz 120 400 90 300 60 200 30 100 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Reverse Voltage, VR (V) Ambient temperature, TA (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB105 Page 2 Comchip Technology CO., LTD. Capacitance, Cj (pF) Reverse Current, IR (A) Power Dissipation, PD (mW) Forward Current, IF (mA)