SMD Schottky Barrier Rectifiers CDBA1150-HF Thru. CDBA1200-HF Reverse Voltage: 150 to 200 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free DO-214AC (SMA) Features -Low Profile surface mount applications in order to optimize board space. 0.067 (1.70) 0.114 (2.90) -Low power loss, high efficiency. 0.047 (1.20) 0.083 (2.10) -High current capability, low forward voltage drop. 0.187 (4.75) -High surge capability. 0.157 (4.00) -Guard ring for overvoltage protection. -Ultra high-speed switching. 0.012 (0.30) -Silicon epitaxial planar chip,metal silicon junction. TYP. Mechanical data 0.098 (2.50) 0.067 (1.70) -Epoxy: UL94-V0 rate flame retardant. 0.008(0.20) -Case: Molded plastic, DO-214AC / SMA 0.061 (1.55) 0.003(0.08) 0.030 (0.75) 0.224 (5.70) -Terminals: solderable per MIL-STD-750, 0.185 (4.70) method 2026. -Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) -weight: 0.055 grams Maximum Ratings and Electrical Characteristics Ratings at Ta=25C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . CDBA CDBA Parameter Symbol Units 1150-HF 1200-HF Max. Repetitive peak reverse voltage VRRM 150 200 V Max. DC blocking voltage VDC 150 200 V Max. RMS voltage VRMS 105 140 V Max. Instantaneous forward voltage 1.0A, TA=25C VF 0.87 0.90 V Operating Temperature TJ -50 to +175 C Symbol Parameter Conditions MIN. TYP. MAX. Units see Fig.1 Forward rectified current IO 1.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 30 A on rate load (JEDEC method) VR =VRRM TA=25C IR 0.5 mA Reverse Current VR =VRRM TA=100C IR 20 mA Thermal Resistance Junction to ambient R JA 88 C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 120 pF Storage temperature TSTG -50 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JB023 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBA1150-HF thru. CDBA1200-HF) Fig.1 - Typical Forward Current Derating Curve Fig.2 - Typical Forward Characteristics 50 1.2 10 1.0 0.8 1.0 0.6 0.4 0.1 O 0.2 T=25 C J Pulse Width 300us 1% Duty Cycle 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 150 175 Ambient Temperature, (C) Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Forward Fig.4 - Typical Junction Capacitance Surge Current 30 350 O TJ=25 C 8.3ms single half sine wave, JEDEC method 300 24 250 18 200 150 12 100 6 50 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics 100 10 1.0 TJ=125 C 0.1 TJ=25 C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JB023 Page 2 Comchip Technology CO., LTD. Reverse Leakage Current , (mA) (A) Average Forward Current , (A) Peak Forward Surge Cur rent, Junction Capacitance , (pF) INSTANTANEOUS FORWARD CURRENT, (A)