SMD Schottky Barrier Rectifiers CDBA140-HF Thru. CDBA1100-HF Reverse Voltage: 40 to 100 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free DO-214AC (SMA) Features -Low Profile surface mount applications in order to optimize board space. 0.067 (1.70) 0.114 (2.90) 0.047 (1.20) 0.083 (2.10) -Low power loss, high efficiency. -High current capability, low forward voltage drop. 0.187 (4.75) 0.157 (4.00) -High surge capability. -Guard ring for overvoltage protection. -Ultra high-speed switching. 0.012 (0.30) TYP. -Silicon epitaxial planar chip,metal silicon junction. 0.098 (2.50) Mechanical data 0.067 (1.70) -Epoxy: UL94-V0 rate flame retardant. 0.008(0.20) 0.061 (1.55) 0.003(0.08) -Case: Molded plastic, DO-214AC / SMA 0.030 (0.75) 0.224 (5.70) 0.185 (4.70) -Terminals: solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeter) -Polarity: Indicated by cathode band. -weight: 0.055 grams Maximum Ratings and Electrical Characteristics Ratings at Ta=25C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . CDBA CDBA CDBA Symbol Units Parameter 140-HF 160-HF 1100-HF Max. Repetitive peak reverse voltage VRRM 40 60 100 V Max. DC blocking voltage VDC 40 60 100 V Max. RMS voltage VRMS 28 42 70 V Max. instantaneous forward voltage VF 0.50 0.70 0.81 V 1.0A, TA=25C Operating Temperature TJ -50 to +150 C Symbol Parameter Conditions MIN. TYP. MAX. Units see Fig.1 Forward rectified current IO 1.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 30 A on rate load (JEDEC method) VR =VRRM TA=25C IR 0.5 mA Reverse Current VR =VRRM TA=100C IR 20 mA Thermal Resistance Junction to ambient R JA 88 C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 120 pF Storage temperature TSTG -50 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB007 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBA140-HF thru CDBA1100-HF) Fig.2 - Typical Forward Characteristics Fig.1 - Typical Forward Current Derating Curve 100 1.2 10 1.0 0.8 1.0 0.6 0.4 0.1 0.2 TJ=25C Pulse Width 300us 1% Duty Cycle 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 Forward Voltage, (V) Ambient Temperature, (C) Fig.3 - Maximum Non-repetitive Forward Fig.4 - Typical Junction Capacitance Surge Current 30 350 O TJ=25 C 8.3ms single half sine wave, JEDEC method 300 24 250 18 200 150 12 100 6 50 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics 100 10 1.0 TJ=125 C 0.1 TJ=25 C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB007 Page 2 Comchip Technology CO., LTD. CDBA140-HF CDBA160-HF CDBA1100-HF Reverse Leakage Current , (mA) (A) Average Forward Current, (A) Peak Forward Surge Cur rent, Junction Capacitance , (pF) Instantaneous Forward current, ( A )