Silicon Carbide Power Schottky Diode CDBDSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device D-PAK(TO-252) Features 0.264(6.70) - Rated to 650V at 5 Amps 0.091(2.32) 0.256(6.50) 0.089(2.28) - Short recovery time 0.215(5.46) 0.023(0.58) 0.201(5.10) - High speed switching possible 0.018(0.46) 3 - High frequency operation. - High temperature operation. 0.012(0.30) Max. - Temperature independent switching behaviour. 0.051(1.30) 0.043(1.10) - Positive temperature coefficient on VF 1 2 0.114(2.90) 0.090(2.29) 0.100(2.55) 0.035(0.89) Circuit Diagram 0.034(0.86) 0.093(2.37) 0.026(0.66) 0.023(0.58) 0.085(2.16) 0.016(0.43) C(3) Dimensions in inches and (millimeters) C(1) A(2) Maximum Ratings (at TA=25C, unless otherwise noted) Symbol Parameter Value Unit Conditions Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC bolcking voltage VDC 650 V TC = 25C 21.5 TC = 135C Continuous forward current IF 10 A TC = 160C 5 Tc = 25C, tp = 10ms Repetitive peak forward surge cruuent IFRM 40 A Half sine wave, D = 0.3 Tc = 25C, tp = 10ms Non-repetitive peak forward surge current IFSM 80 A Half sine wave TC = 25C 85.8 Power dissipation W PTOT TC = 110C 37.2 Typical thermal resistance Junction to case R JC 1.748 C/W Operating junction temperature range TJ -55 ~ +175 C Storage temperature range TSTG -55 ~ +175 C Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 1 Comchip Technology CO., LTD. 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00)10% Duty 30% Duty 50% Duty DC 70% Duty Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25C, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit IF = 5A, Tj = 25C 1.35 1.7 Forward voltage VF V IF = 5A, Tj = 175C 1.55 2.5 VR = 650V, Tj = 25C 10 100 A Reverse current IR VR = 650V, Tj = 175C 15 200 VR = 400V, Tj = 150C Total capacitive charge VR QC 23 nC QC = C(V) dv 0 VR = 0V, Tj = 25C, f = 1MHZ 424 434 Total capacitance VR = 200V, Tj = 25C, f = 1MHZ 44 45 pF C VR = 400V, Tj=25C, f=1MHZ 42.5 43 RATING AND CHARACTERISTIC CURVES (CDBDSC5650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 9 0.16 8 TJ=25C 0.14 7 0.12 TJ=75C 6 0.10 TJ=125C TJ=75C 5 0.08 TJ=125C TJ=175C 4 0.06 TJ=175C 3 0.04 TJ=25C 2 0.02 1 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 100 200 300 400 500 600 700 800 Forward Voltage, VF (V) Reverse Voltage, VR (V) Fig.3 - Current Derating Fig.4 - Capacitance vs. Reverse Voltage 80 500 450 70 400 60 350 50 300 40 250 200 30 150 20 100 10 50 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 Case Tempature, TC (C) Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 2 Comchip Technology CO., LTD. Forward Current, IF (A) Forward Current, IF (A) Capacitance Between Terminals, CJ (pF) Reverse Current, IR (mA)