SMD Schottky Barrier Diode CDBFR0520-HF Io = 500 mA VR = 20 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102(2.60) 0.095(2.40) -Low forward voltage. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data 0.035(0.90) 0.027(0.70) -Case: 1005/SOD-323F standard package, molded plastic. 0.020(0.50) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BL 0.040(1.00) Typ. -Mounting position: Any -Weight: 0.006 gram(approx.). Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 V Average forward rectified current IO 0.5 A 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 2 A on rate load (JEDEC method) O Storage temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Parameter Conditions Symbol Min Max Unit Forward voltage IF = 100mA 0.36 VF V IF = 500mA 0.47 Reverse current VR = 20V IR 100 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage pF CT 100 REV:A QW-G1083 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBFR0520-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 100m 10m O 100 C 1m 100 O 75 C 100u O 25 C 10u 10 O 1u -25 C 1 0.1u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 60 120 f=1MHz O Ta=25 C 100 50 80 40 60 30 40 20 20 10 0 0 0 5 10 15 20 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1083 Page 2 Comchip Technology CO., LTD. O 125 C O 25 C O 75 C O -25 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )