SMD Schottky Barrier Rectifiers CDBMHT340-HF Thru. CDBMHT3100-HF Reverse Voltage: 40 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free SOD-123HT 0.146(3.70) Features 0.130(3.30) 0.012(0.30) Typ. - Excellent power dissipation of fers better reverse leakage current and thermal resistance. - Low profile package is 40% thinner than standards 0.071(1.80) SOD-123. 0.055(1.40) - Low power loss, high efficiency. - High current capability, low forward voltage drop. - High surge capability. - Guard ring for overvoltage protection. 0.039(1.00) 0.024(0.60) - Ultra high-speed switching. 0.031(0.10) Typ. - Silicon epitaxial planar chip, metal silicon junction. 0.083(2.10) 0.031(0.80) Typ. 0.075(1.90) - Heat sink bottom. - Lead-free parts meet environmental standards of 0.024(0.6) Typ. MIL-STD-19500/228 0.051(1.30) 0.031(0.80) 0.043(1.10) 0.024(0.60) Mechanical data 0.047(1.20) 0.033(0.85) - Epoxy : UL94-V0 rated flame retardant. 0.039(1.00) 0.030(0.75) - Case: Molded plastic, SOD-123HT/Mini SMA. - Terminals: Solderable per MIL-STD-750, method 2026. 0.047(1.20) 0.039(1.00) - Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) - Mounting Position : Any. - Weight: 0.011 grams approx. Electrical Characteristics (at TA=25C unless otherwise noted) CDBMH CDBMH CDBMH Symbol Parameter Unit T340-HF T360-HF T3100-HF Repetitive peak reverse voltage VRRM 40 60 100 V Continuous reverse voltage VR 40 60 100 V RMS voltage VRMS 28 42 70 V Max. Forward rectified current IO 3.0 A Maximum forward voltage at IF=3.0A VF 0.55 0.70 0.85 V Max. Forward surge current, 8.3ms single half sine-wave superimposed on rated IFSM 50 A load (JEDEC method) 0.2 VR=VRRM TJ=25C IR Max. Reverse current mA VR=VRRM TJ=100C IR 10 Junction to ambient RJA 70 C/W Thermal resistance Junction to case RJC 35 C/W Typ. Diode junction capacitance (Note 1) pF CJ 160 Operating temperature TJ -55 to +125 -55 to +150 C Storage temperature range TSTG -65 to +175 C Note : 1. F=1MHz and applied 4V DC reverse voltage Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB056 Page 1 Comchip Technology CO., LTD.CDBMHT360-HF ~ CDBMHT3100-HF CDBMHT340-HF SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBMHT340-HF Thru. CDBMHT3100-HF) Fig.1- Typical Forward Current Derating Curve Fig.2- Typical Forward Characteristics 100 3.0 10 2.5 2.0 1 1.5 1.0 0.1 TJ=25C 0.5 Pulse Width 300US 1% Duty Cycle 0.01 0 0 25 50 75 100 125 150 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Ambient Temperature, (C) VF, Forward Voltage (V) Fig.3- Maximum Non-repetitive Fig.4- Typical Junction Capacitance Forward Surge Current 50 700 O TJ=25 C 8.3ms single half sine wave, JEDEC method 600 40 500 30 400 300 20 200 10 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5- Typical Reverse Characteristics 100 10 TJ=100C 1 TJ=75C 0.1 TJ=25C 0.01 0 40 80 120 160 200 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB056 Page 2 Comchip Technology CO., LTD. CDBMHT340-HF CDBMHT360-HF CDBMHT3100-HF Reverse Leakage Current, (mA) Peak Forward Surge Current, (A) Average Forward Current, (A) Junction Capacitance (pF) Instantaneous Forward Current (A)