Product Information

CDBT-40S-G

CDBT-40S-G electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY 40V 200mA

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9838 ea
Line Total: USD 0.98

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

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CDBT-40S-G
Comchip

1 : USD 0.9838
10 : USD 0.6473
100 : USD 0.1219
1000 : USD 0.0746
3000 : USD 0.0559
9000 : USD 0.0466
24000 : USD 0.0445
45000 : USD 0.0415
99000 : USD 0.0362

     
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RoHS - XON
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Technology
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Small Signal Schottky Diodes CDBT-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200 mA RoHS Device SOT-23 Features - Design for mounting on small surface. 0.118(3.00) 0.110(2.80) - High speed switching application, circuit 3 protection. 0.055(1.40) 0.047(1.20) - Low forward voltage drop. 1 2 0.079(2.00) Mechanical data 0.071(1.80) - Case: SOT-23, molded plastic. 0.006(0.15) - Terminals: Solderable per MIL-STD-750, 0.003(0.08) method 2026. 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) - Weight: 0.0078 grams(approx.). Circuit diagram 0.004(0.10) max 0.020(0.50) 0.020(0.50) 0.012(0.30) 3 3 3 3 0.012(0.30) Dimensions in inches and (millimeter) 1 2 1 2 1 2 1 2 CDBT-40-G CDBT-40S-G CDBT-40C-G CDBT-40A-G Marking Code: 43 Marking Code: 44 Marking Code: 45 Marking Code: 46 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 40 V DC blocking voltage VR Forward continuous current IF 200 mA Power dissipation PD 200 mW Thermal resistance R JA Junction to ambient 500 C/W Junction temperature TJ 125 C Storage temperature range TSTG -55 to +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Min. Max. Unit Reverse breakdown voltage VBR IR=10 A 40 V Reverse voltage leakage current IR VR=30V 200 nA IF=1mA 380 Forward voltage VF mV IF=40mA 1000 Diode capacitance VR=0V, f=1MHz pF CD 5 Irr=1mA, IF=IR=10mA, Reverse recovery time Trr 5 nS RL=100 Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BA001 Page 1 Comchip Technology CO., LTD.Small Signal Schottky Diodes RATING AND CHARACTERISTIC CURVES (CDBT-40/S/C/A-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 100 100 O TA=100 C 10 TA=100C 10 1.0 TA=25C 0.1 1 O TA=25 C 0.01 0.1 1E-3 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 Reverse Voltage, VR (V) Forward Voltage, VF (V) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 250 4.0 TA=25C Mounted on glass epoxy PCBs f=1MHz 3.5 200 3.0 150 2.5 100 2.0 50 1.5 1.0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 Reverse Voltage, VR (V) Ambient Temperature, TA (C) Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BA001 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CD (pF) Forward Current, IF (mA) Pow er Dissipation, PD (m W) Reverse Current, IR (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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