SMD Schottky Barrier Diodes CDBV1100-HF Forward current: 1A Reverse voltage: 100V RoHS Device SOD-323 Halogen Free 0.108(2.75) 0.098(2.50) Features 0.012(0.30) 0.055 (1.40) Typ. 0.047 (1.20) - Low leakage current. 0.071(1.80) - Easy pick and place. 0.063(1.60) - Plastic package has Underwriters Lab. Flammability Classification 94V-0 - Exceeds environmental standard MIL-S-19500/228. 0.004(0.10) 0.035(0.90) Typ. 0.031(0.80) 0.004(0.10) 0.004(0.42) 0.001(0.02) Mechanical Data 0.009(0.22) - Case: SOD-323, molded plastic. Dimensions in inches and (millimeter) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram - Polarity: Indicated by cathode end. Maximum Ratings (At Ta=25C, unless otherwise noted) Symbol Parameter Value Unit Peak repetitive reverse voltage VRRM 100 V Working peak reverse voltage VRWM RMS reverse voltage VR(RMS) 70 V Average rectified output current IO 1 A Non-repetitive peak forward surge current t=8.3ms IFSM 9 A Power dissipation PD 250 mW Thermal resistance from junction to ambient R JA 400 C/W Junction temperature range TJ -55 ~ +150 C Storage temperature range TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Reverse current TJ=25C VR = 100V IR 0.2 50 uA IF = 0.1A 0.52 Forward voltage (Note 1) VF V IF = 1A 0.82 Total capacitance f = 1MHz, VR = 4V pF Ctot 25 Notes: (1) Pulse test : tp 300s 0.02 Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-JB067 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBV1100-HF) Fig.1 - Power Derating Curve Fig.2 - Typical Forward Characteristics 1000 300 TJ=150C 250 TJ=125C 100 200 TJ=100C TJ=75C 10 150 TJ=50C TJ=25C 100 1 50 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 25 50 75 100 125 Ambient Temperature, (C) Forward Voltage, (V) Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Capacitance or Diodes 1000.00 80 70 100.00 TJ=150C 60 TJ=125C 10.00 TJ=100C 50 TJ=75C 1.00 40 TJ=50C 30 0.1 0 20 TJ=25C 0.01 10 0 0 0 20 30 40 50 60 0 10 20 30 40 Reverse Voltage, (V) Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-JB067 Page 2 Comchip Technology CO., LTD. Reverse Current, (uA) Power Dissipation, (mW) Instantaneous Forward Current, (mA) Caoacutance of Diode, (pF)