SMD Efficient Fast Recovery Rectifiers CEFB101-G Thru. CEFB105-G Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.083(2.11) 0.155(3.94) 0.075(1.91) 0.130(3.30) -Super fast recovery time for high efficient. -Built-in strain relief. -Low forward voltage drop. 0.220(5.59) 0.200(5.08) 0.012(0.31) Mechanical data 0.006(0.15) 0.096(2.44) -Case: JEDEC DO-214AA, molded plastic. 0.083(2.13) -Terminals: solderable per MIL-STD-750, 0.008(0.20) 0.050(1.27) 0.004(0.10) 0.030(0.76) method 2026. -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 V Max. DC blocking voltage VDC 50 100 200 400 600 V Max. RMS voltage VRMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 30 A on rate load (JEDEC method) IO 1.0 A Max. average forward current Max. instantaneous forward voltage at VF 0.875 1.1 1.25 V 1.0A Trr 25 35 50 nS Reverse recovery time O 5.0 Max. DC reverse current at TA=25 C IR A O 200 rated DC blocking voltage TA=125 C O R JL 13 Max. thermal resistance (Note 1) C/W O Max. operating junction temperature TJ 150 C O Storage temperature TSTG -55 to +150 C 2 Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.08.0 mm copper pad area. REV:A QW-BE003 Page 1 Comchip Technology CO., LTD.SMD Efficient Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CEFB101-G thru CEFB105-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 CEFB101-G~103-G O TJ=125 C 10 1 CEFB104-G O TJ=75 C CEFB105-G 1 0.1 O 0.1 0.01 TJ=25 C O TJ=25 C Pulse width 300 S 4% duty cycle 0.01 0.001 0 0.4 0.8 1.2 1.6 2.0 0 30 60 90 120 150 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 35 50 O O TJ=25 C TJ=25 C 8.3ms single half sine f=1MHz and applied wave, JEDEC method 30 4VDC reverse voltage 40 25 30 CEFB101-G~103-G 20 15 20 CEFB104-G~105-G 10 10 5 0 0 0.01 0.1 1 10 100 1 10 100 Reverse Voltage (V) Number of Cycles at 60Hz Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 50 10 2.4 NONINDUCTIVE NONINDUCTIVE +0.5A 2.0 (-) 1.6 (+) 0 D.U.T. 25Vdc PULSE (approx.) GENERATOR 1.2 (-) -0.25A (NOTE 2) (+) Single phase 1 0.8 OSCILLLISCOPE Half wave 60Hz NON- (NOTE 1) INDUCTIVE 0.4 NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 0 0 25 50 75 100 125 150 175 1cm 2. Rise time=10ns max., input impedance=50 . O Set time base for Ambient Temperature ( C) 50 / 10nS / cm REV:A QW-BE003 Page 2 Comchip Technology CO., LTD. Rever se Current (A) Junction Capaciatn ce( p F) Peak F orward Surge C urrent A( ) Forward Curren t(A) Average Forward Current (A)