SMD Super Fast Recovery Rectiers ES3AB-HF Thru. ES3JB-HF Reverse Voltage: 50 to 600 Volts Forward Current: 3 Amp RoHS Device Halogen Free SMB/DO-214AA Features 0.185(4.70) - For surface mounted applications. 0.160(4.06) - Low prole package. 0.087(2.20) 0.146(3.70) - Glass passivated chip junction. 0.075(1.90) 0.130(3.30) - Super fast reverse recovery time. 0.213(5.40) Mechanical data 0.200(5.08) 0.012(0.305) 0.006(0.152) - Case: SMB 0.096(2.44) - Terminals: Solderable per MIL-STD-750, 0.084(2.13) method 2026. 0.059(1.50) 0.008(0.20) 0.031(0.80) 0.002(0.05) Circuit Diagram Dimensions in inches and (millimeter) Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20% ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB Symbols Parameter Units -HF -HF -HF -HF -HF -HF -HF Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectied current IF(AV) 3 A at Tc =100C Peak forward surge current, 8.3ms IFSM 90 single half sine-wave superimposed A on rated load Max. forward voltage at 3A VF 1.0 1.25 1.68 V Maximum DC reverse current Ta = 25C 5 A IR at rated DC blocking voltage Ta =125 C 100 Typical junction capacitance Cj pF 45 at VR = 4V, f = 1MHz Maximum reverse recovery time (Note 1) trr 35 ns R JA 50 Typical thermal resistance (Note 2) C/W R JC 16 Operating and storage temperature range Tj, Tstg -55 ~ +150 C Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A. 2. P.C.B. mounted with 2.0 x 2.0 (5 x 5 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS017 Page 1 Comchip Technology CO., LTD.SMD Super Fast Recovery Rectiers Rating and Characteristic Curves (ES3AB-HF Thru. ES3JB-HF) Fig.1 - Max. Average Forward Current Rating Fig.2 - Typical Reverse Characteristics 3.5 300 TJ=125C 100 3.0 2.5 TJ=75C 2.0 10 1.5 TJ=25C 1.0 1.0 0.5 Single phase half-wave 60Hz resistive or inductive load 0 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 Case Temperature, ( C) % of PIV.Volts Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance 10 300 TJ=25C 100 1.0 ES3AB-HF~ES3DB-HF ES3EB-HF/ES3GB-HF 0.1 10 ES3JB-HF 0.01 TJ=25C f=1MHz Vsig=50mVp-p 0.001 1 0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Maximum Non-Repetitive Peak Forward Surge Current 160 140 120 100 80 60 40 8.3ms single half sine wave 20 (JEDEC Method) 0 1 10 100 Number of Cycles Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS017 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) Average Forward Current, (A) Junction Capacitance, (pF) Reverse Current, IR (A)