MBR20100CT-G Comchip

SMD Schottky Barrier Rectifiers Comchip S M D D i o d e S p e c i a l i s t MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. 0.187(4.70) 0.108 0.153(3.90) 0.148(3.80) 0.413(10.50) (2.75) -Guard ring for transient protection. 0.146(3.70) 0.055(1.40) 0.347( 9.50) 0.047(1.20) -Low power loss, high efficiency. -High current capability, low VF. 0.270(6.90) 0.230(5.80) -High surge capacity. 0.610(15.50) -For use in low voltage, high frequency inverters, 0.583(14.80) free wheeling,and polarity protection applications. Mechanical Data 0.157 0.051(1.30) 0.583(14.80) (4.0) -Case: TO-220AB, molded plastic MAX 0.531(13.50) -Epoxy: UL 94-V0 rate flame retardant. -Polarity: As marked on the body. 0.024(0.60) 0.102(2.60) 0.012(0.30) 0.043(1.10) 0.091(2.30) -Mounting position: Any 0.032(0.80) 0.126 (3.20) -Weight: 2.24 grams Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. MBR MBR MBR MBR MBR MBR MBR Symbol Parameter Unit 2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G Maximum Recurrent Peak Reverse Voltage VRRM 30 40 50 60 80 100 150 V Maximum RMS Voltage VRMS 21 28 35 42 56 70 105 V Maximum DC Blocking Voltage VDC 30 40 50 60 80 100 150 V Maximum Average Forward Rectified I(AV) 20.0 A Current ( See Fig.1 ) Peak Forward Surage Current , IFSM 8.3ms Single Half Sine-Wave 150 A Super Imposed On Rated Load(JEDEC Method) IF=10A TJ= 25C - 0.80 0.85 0.95 IF=10A TJ=125C 0.57 0.70 0.75 0.85 Peak Forward Voltage VF V (Note 1) IF=20A TJ= 25C 0.84 0.95 0.95 1.05 IF=20A TJ=125C 0.72 0.85 0.85 0.95 TJ= 25C 0.10 0.10 0.10 0.10 Maximum DC Reverse Current mA IR at Rate DC Blocking Voltage TJ= 125C 15.0 10.0 7.50 5.00 Typical Junction Capacitance (Note2) pF CJ 400 320 Typical Thermal Resistance (Note3) R JC 1.50 3.50 C/W Operating Temperature Range TJ -55 to +150 C Storage Temperature Range TSTG -55 to +175 C NOTES: 1. 300us pulse width,2% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance junction to case. REV:B QW-BB046 Page 1 Comchip Technology CO., LTD.SSMMDD SScchhoottttkkyy BBaarrrriieerr RReeccttiiffiieerrss Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (MBR2030CT -G Thru. MBR20150CT -G) FIG.1- Forward Current Derating Curve FIG.2- Maximum Non-Repetitive Surge Current 25.0 300 Pulse Width 8.3ms Single Half-Sine-Wave 250 (JEDEC METHOD) 20.0 200 15.0 150 10.0 100 Single Phase Half Wave 5.0 60Hz Resistive or 50 Inductive Load 0 0 0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 Case Temperature, (C) Number Of Cycles at 60Hz FIG.3- Typica l Rever Characteristics FIG.4- Typical Forward Characteristics 1000 100 MBR2030CT-G~MBR2060CT-G MBR2030CT-G~ MBR2080CT-G~MBR20150CT-G MBR2040CT-G 100 10 10 TJ=125C MBR2050CT-G~ MBR2060CT-G MBR20150CT-G 1.0 MBR2080CT-G~ 1 MBR20100CT-G 0.1 TJ=25C TJ=25C PULSE WIDTH 300US 2% DUTY CYCLE 0.01 0.1 0 20 40 60 80 100 120 140 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Percent Of Rated Peak Reverse Voltage, ( %) Instantaneous Forward Voltage, ( V ) FIG.5- Typical Junction Capacitance 1000 MBR2030CT-G~ MBR20400CT-G MBR2030CT-G~ MBR20400CT-G 100 TJ=25C f=1MHz 10 0.1 1 10 100 Reverse Voltage, (V) REV:B QW-BB046 Page 2 Comchip Technology CO., LTD. Capacitance, (pF) Instantaneous Reverse Current, ( mA ) Average Forward Current, ( A ) Instantaneous Forward Current, ( A ) Peak Forward Surge Current, ( A )