RB521S-30 Comchip

SMD Schottky Barrier Diodes RB521S-30 Io = 200 mA VR = 30 Volts RoHS Device Features SOD-523 - Low reverse current. - Low forward voltage. 0.008(0.20) 0.051(1.30) 0.043(1.10) REF - Designed for mounting on small surface. 0.014(0.35) 0.035(0.90) 0.028(0.70) 0.010(0.25) - Extremely thin package. - Majority carrier conduction. 0.067(1.70) 0.059(1.50) Mechanical data 0.008(0.20) 0.031(0.77) 0.003(0.07) 0.020(0.50) - Case: SOD-523 standard package, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeter) - Polarity: Color band denotes cathode end. Circuit Diagram - Mounting position: Any - Weight: 0.0012 grams(approx.). Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Non-repetitive peak forward 8.3ms single half sine-wave superimposed IFSM 1 A surge current on rate load(JEDEC method) Power dissipation PD 150 mW Thermal resistance Junction to ambient RJA 667 C Junction temperature range Tj -40 to +125 C Storage temperature range TSTG -55 to +150 C Electrical Characteristics (At Ta=25C, unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 10 mA VF1 0.35 Forward voltage V IF = 200 mA VF2 0.50 A Reverse current VR = 10 V IR 30 Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB044 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (RB521S-30) Fig.1 - Typical Forward Characteristics Fig.2 - Typical Reverse Characteristics 1000 1000 TJ=125C 100 100 TJ=100C TJ=125C TJ=100C TJ=75C TJ=75C 10 10 TJ=50C TJ=50C TJ=25C 1 1 TJ=25C 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 Forward Voltage, VF (V) Reverse Voltage, VR (V) Fig.3 - Typical Capacitance Characteristics Fig.4 - Power Derating Curve 180 100 Ta=25C f=1MHZ 150 120 10 90 60 30 1 0 0 5 10 15 20 0 25 50 75 100 125 Reverse Voltage, VR (V) Ambient Temperature, Ta (C) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB044 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CT , (pF) Forward Current, IF (mA) Power Dissipation, PD (mW) Reverse Current, IR ( uA )