Leaded Schottky Barrier Rectiers SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features 1.000(25.40) Min. - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability 0.378(9.60) - Silicon epitaxial planar chips. 0.283(7.20) - For use in low voltage, high eciency inverters, 0.220(5.60) free wheeling, and polarity protection applications 0.188(4.79) - Lead-free part, meet RoHS requirements. 1.000(25.40) Min. Mechanical data 0.051(1.30) DIA. - Epoxy: UL94-V0 rated ame retardant 0.037(0.95) - Case: Molded plastic body DO-201AD - Terminals: Solderable per MIL-STD-750 Method 2026 Dimensions in inches and (millimeter) - Polarity: Color band denotes cathode end Circuit Diagram - Mounting Position: Any - Weight: 1.12 grams (approx.). Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specied. SB SB SB SB SB SB SB Symbol Parameter Unit 540-G 545-G 520-G 550-G 560-G 580-G 5100-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectied current I(AV) A 5.0 0.5 (12.7mm) lead length at TA=75C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load 100 IFSM A ( JEDEC method) TL=110C Maximum forward voltage at 5.0A (Note 1) VF V 0.55 0.70 0.85 TJ=25C IR 0.5 Maximum DC reverse current mA At rated DC blocking voltage TJ=100C 50 30 IR Typical junction capacitance (Note 2) pF CJ 350 135 R JA 35 Typical thermal resistance (Note 3) C/W R JL 15 Operating junction temperature range TJ -65 to +150 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Pulse test 300s pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance junction to ambient and from junction to lead P.C.B mounted 0.500(12.7mm)lead length with 2.5*2.5(63.5*63.5mm) copper pad. Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB051 Page 1 Comchip Technology CO., LTD.Leaded Schottky Barrier Rectiers RATING AND CHARACTERISTIC CURVES (SB520-G Thru. SB5100-G) Fig.1 - Forward Current Derating Curve Fig.2 - Maximum Non-repetitive Peak Forward Surge Current 6.0 200 TL=110C 8.3mS single half sine-wave 5.0 (JEDEC Method) 150 4.0 3.0 SB520-G ~ SB545-G 100 2.0 50 single phase half wave 60Hz 1.0 resistive or inductive load SB550-G ~ SB5100-G 3.75(9.5mm) lead length 0 0 1 10 100 0 25 50 75 100 125 150 175 Lead Temperature, ( C ) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Fig.4A - Typical Reverse Characteristics Characteristics 50 100 SB520-G ~ SB545-G 10 10 TJ=125C SB580-G ~ SB5100-G 1.0 TJ=100C 1.0 SB550-G ~ SB560-G 0.1 SB520-G ~ SB545-G 0.1 TJ=25C 0.01 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Typical Junction Capacitance Fig.4B - Typical Reverse Characteristic 5 1000 10 TJ=25C SB320-G ~ SB3100-G f=1.0MHz Vsig=50mvp-p TJ=150C 4 10 SB520-G ~ SB545-G TJ=125C 3 10 SB550-G ~ SB5100-G 100 TJ=75C 2 10 1 10 TJ=25C 10 1 0.1 1.0 10 100 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage, ( %) Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB051 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous Forward Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Reverse Current, (mA) Peak Forward Surge Current, (A)