SMD Schottky Barrier Rectiers SS24F-HF Thru. SS220F-HF Reverse Voltage: 40 to 200 Volts Forward Current: 2.0 Amp RoHS Device SMAF Halogen Free 0.193(4.90) 0.173(4.40) Features 0.063(1.60) 0.106(2.70) - Metal silicon junction, majority carrier conduction. 0.051(1.30) 0.094(2.40) - For surface mounted applications. - Low power loss, high eciency. 0.146(3.70) 0.130(3.30) - High forward surge current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. 0.047(1.20) 0.035(0.90) 0.008(0.20) 0.047(1.20) 0.005(0.12) 0.031(0.80) Mechanical data - Case: SMAF Dimensions in inches and (millimeter) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20% Symbols Parameter SS24F-HF SS26F-HF SS210F-HF SS215F-HF SS220F-HF Units Maximum repetitive peak reverse voltage VRRM 40 60 100 150 200 V Maximum RMS voltage VRMS 28 42 70 105 140 V Maximum DC blocking voltage VDC 40 60 100 150 200 V Maximum average forward rectied current IF(AV) 2 A Peak forward surge current, 8.3ms single half sine-wave superimposed IFSM 50 A on rated load (JEDEC method) Max instantaneous forward voltage at 2A VF 0.55 0.70 0.85 0.95 V Maximum DC reverse current Tj = 25C 0.5 0.3 IR mA at rated DC reverse voltage Tj =100C 5 3 Typical junction capacitance (Note 1) Cj 160 80 pF Typical thermal resistance (Note 2) R JA 80 C/W Operating junction temperature range Tj -55 ~ +150 C Storage temperature range Tstg -55 ~ +150 C Notes: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. P.C.B. mounted with 2.0 X 2.0 (5 X 5 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:A SP-JB031 Page 1 Comchip Technology CO., LTD.SS24F-HF SS26F-HF~SS220F-HF SMD Schottky Barrier Rectiers Rating and Characteristic Curves (SS24F-HF Thru. SS220F-HF) Fig.1 - Forward Current Derating Curve Fig.2 - Typical Reverse Characteristics 4 3.0 10 2.5 TJ=100C 10 2.0 TJ=75C 1.5 10 1.0 SS24F-HF 1 SS26F-HF~SS220F-HF 10 0.5 TJ=25C Single phase half-wave 60Hz resistive or inductive load 0 0 10 0 25 50 75 100 125 150 0 20 40 60 80 100 Case Temperature, (C) Percent of Rated Peak Reverse Voltage, (%) Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance 500 20 TJ=25C SS24F-HF 10 SS26F-HF SS210F-HF 100 SS215F-HF~SS220F-HF 1.0 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Maximum Non-Repetitive Peak Fig.6 - Typical Transient Thermal Impedance Forward Surge Current 60 100 50 40 30 10 20 10 8.3ms single half sine wave (JEDEC Method) 0 1 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Pulse Duration, t (sec Company reserves the right to improve product design , functions and reliability without notice. REV:A SP-JB031 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) Average Forward Current, (A) Transient Thermal Impedance, (C/W Junction Capacitance, (pF) Instantaneous Reverse Current, ( A)