SMD Schottky Barrier Rectiers SS34B-HF Thru. SS320B-HF Reverse Voltage: 40 to 200 Volts Forward Current: 3.0 Amp RoHS Device DO-214AA (SMB) Halogen Free 0.087 (2.20) 0.157 (4.00) Features 0.071 (1.80) 0.130 (3.30) - Metal silicon junction, majority carrier conduction 0.191 (4.85) - For surface mounted applications 0.157 (4.00) - Low power loss, high eciency 0.012 (0.31) MAX. - High forward surge current capability - For use in low voltage, high frequency inverters, 0.126 (3.20) 0.078 (1.99) free wheeling, and polarity protection applications 0.008(0.21) 0.063 (1.60) MAX. 0.028 (0.70) 0.220 (5.60) Mechanical data 0.197 (5.00) - Case: SMB - Terminals: Solderable per MIL-STD-750, Method 2026 Dimensions in inches and (millimeter) - Approx. Weight: 95mg / 0.0034oz Circuit Diagram Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specied.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS34B SS36B SS310B SS315B SS320B Units Maximum repetitive peak reverse voltage V RRM 40 60 100 150 200 V Maximum RMS voltage V 28 42 70 105 140 V RMS Maximum DC blocking voltage V DC 40 60 100 150 200 V Maximum average forward rectied current I F(AV) 3.0 A Peak forward surge current,8.3ms single half sine-wave superimposed I 80 A FSM on rated Load (JEDEC method) Max instantaneous forward voltage at 3 A V 0.55 0.70 0.85 0.95 V F 0.5 0.3 Maximum DC reverse current T = 25C a mA I R at rated DC reverse voltage T =100C a 5 3 1 pF Typical junction capacitance 450 400 C j 2 Typical thermal resistance C/W R 60 JA Operating junction temperature range T j -55 ~ +150 C Storage temperature range T stg -55 ~ +150 C 1Measured at 1 MHz and applied reverse voltage of 4 V D.C 2P.C.B. mounted with 2.0 X 2.0 (5 X 5 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B SP-JB017 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectiers RATING AND CHARACTERISTIC CURVES (SS34B-HF Thru. SS320B-HF) Fig.2 - Typical Reverse Characteristics Fig.1 - Forward Current Derating Curve 4 3.5 10 T =100 C J 3.0 3 10 2.4 TJ=75C 2 1.8 10 40V~60V 1.2 100V~200V 1 10 0.6 TJ=25C 0 0.0 10 25 50 75 100 125 150 0 20 40 60 80 100 Lead Temperature (C) Percent of Rated Peak Reverse Voltage% Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance TJ=25C 20 1000 10 500 200 100 1.0 40V 60V 100V 150V/200V 20 40V~60V 100V~200V 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 - Maximum Non-Repetitive Peak Fig.6 - Typical Transient Thermal Impedance Forward Surge Current 90 100 80 70 60 10 50 40 30 8.3 ms Single Half Sine Wave (JEDEC Method) 20 1 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz t, Pulse Durationsec Company reserves the right to improve product design , functions and reliability without notice. REV:B SP-JB017 Page 2 Comchip Technology CO., LTD. Average Forward Current (A) Peak Forward Surge Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current ( A) Transient Thermal ImpedanceC/ W) JunctionCapacitance (pF)