SMD Bridge Rectifiers Z4GP206-HF Thru. Z4GP210-HF Reverse Voltage: 600 to 1000 Volts Forward Current: 2.0 A ABS(Z4) RoHS Device RoHS Device Halogen free 0.213(5.40) 0.205(5.20) 0.132(3.35) 0.128(3.25) Features + - - Intermal structure with GPRC 0.232(5.90) 0.224(5.70) (Glass passivated rectifier chip) inside. ~ ~ - Lead less chip form, no lead damage. 0.047(1.20) 0.039(1.00) - Low power loss, High efficiency. R0.250.05 0.037(0.95) 0.033(0.85) - High current capability. - Plastic package has Underwriters Laboratory 0.053(1.35) Flammability Classification 94V-0 . 0.041(1.05) Mechanical data Dimensions in inches and (millimeter) - Case: Packed with FRP substrate and epoxy underfilled. Circuit Diagram - Terminals: Pure Tin plated (Lead-Free), 4 1 solderable per MIL-STD-750, - + method 2026. - Polarity: Laser marking symbols - Weight: 0.11 grams (approx). ~ ~ Abolute Maximum Rating (at TA=25C unless otherwise noted) 3 2 Symbol Parameter Z4GP206-HF Z4GP208-HF Z4GP210-HF Unit Repetitive Peak Reverse Voltage VRRM 600 800 1000 V Average Forward Current I(AV) 2.0 A Peak Forward Surge Current, 8.3mS single half sine-wave, superimposed on rated load IFSM 50 A (JEDEC Method) Operating Temperature Range TJ -55 to +175 C Storage Temperature Range TSTG -55 to +175 C Electrical Characteristics (at TA=25C unless otherwise noted) Typ. Parameter Symbol Min. Max. Unit Conditions - Forward Voltage VF IF = 2.0A 0.95 1.00 V - Repetitive peak reverse current IRRM VR=Max. VRRM, Ta=25C 0.08 5 uA 2 2 - - Current squared time t<8.3ms, Ta = 25C 10.4 I t A S - - Junction capacitance VR=4V, f=1.0MHz CJ 25 pF - - Rth(JA) Junction to ambient (Note) 95 C/W Thermal resistance - - Rth(JL) Junction to lead (Note) 15 C/W Notes: Thermal resistance, junction to ambient,measured on PC board with 5.0*5.0mm(0.03mm thick) land areas. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JBR04 Page 1 Comchip Technology CO., LTD.SMD Bridge Rectifiers RATING AND CHARACTERISTIC CURVES (Z4GP206-HF Thru. Z4GP210-HF) Fig.1- Forward Current Derating Curve Fig.2- Maximum Non-Repetitive Peak Forward Surge Current 2.5 60 8.3ms Single Half Sine-Wave (JEDEC Method) 50 2.0 40 1.5 30 1.0 20 0.5 10 60Hz resistive or inductive load 0 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature, (C) Number Of Cycles At 60Hz Fig.3- Typical Instantaneous Forward Fig.4- Typical Reverse Characteristics Characteristics 100 10 o TJ=150 C 10 o 1.0 TJ=125 C 1.0 0.1 0.1 o TJ=25 C TJ=25C PULSE WIDTH=300uS 0.01 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.3 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage, (V) Fig.5 - Typical Junction Capacitance 100 10 1 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JBR04 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous Forward Current, (A) Average Forward Rectified Current, (A) Instantaneous Reverse Leakage Peak forward surge current, (A) current, (uA)