Low VF SMD Bridge Rectifiers Z4GP206L-HF Thru. Z4GP210L-HF Reverse Voltage: 600 to 1000 Volts Forward Current: 2.0 A RoHS Device ABS(Z4) Halogen free 0.213(5.40) Features 0.205(5.20) 0.132(3.35) 0.128(3.25) - Intermal structure with GPRC (Glass passivated rectifier chip) inside. - + 0.232(5.90) - Lead less chip form, no lead damage. 0.224(5.70) - Low power loss, High efficiency. ~ ~ 0.047(1.20) 0.039(1.00) - High current capability. R0.250.05 0.037(0.95) - Plastic package has Underwriters Laboratory 0.033(0.85) Flammability Classification 94V-0 . 0.053(1.35) 0.041(1.05) Mechanical data Dimensions in inches and (millimeter) - Case: Packed with FRP substrate and epoxy underfilled. - Terminals: Pure Tin plated (Lead-Free), Circuit Diagram solderable per MIL-STD-750, method 2026. 4 1 - Polarity: Laser marking symbols - + - Weight: 0.11 gram ~ ~ 3 2 Abolute Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Z4GP206L-HF Z4GP208L-HF Z4GP210L-HF Unit Repetitive Peak Reverse Voltage VRRM 600 800 1000 V Average Forward Current I(AV) 2.0 A Peak Forward Surge Current, 8.3mS single half sine-wave, superimposed on rated load IFSM 60 A (JEDEC Method) Operating Temperature Range TJ -55 to +175 C Storage Temperature Range TSTG -55 to +175 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Min. Typ. Max. Parameter Conditions Unit Forward Voltage VF IF = 2.0A - 0.92 0.95 V Repetitive peak reverse current - IRRM VR=Max. VRRM, Ta=25C 0.08 5 uA 2 2 - - Current squared time t<8.3ms, Ta = 25C 14.9 I t A S Junction capacitance - - CJ VR=4V, f=1.0MHz 35 pF - - Rth(JA) Junction to ambient (Note) 80 C/W Thermal resistance - - Rth(JL) Junction to lead (Note) 20 C/W Notes: 1. Mounted on P.C.B with 1.5*1.0mm copper pads.. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JBR05 Page 1 Comchip Technology CO., LTD.Low VF SMD Bridge Rectifiers RATING AND CHARACTERISTIC CURVES (Z4GP206L-HF Thru. Z4GP210L-HF) Fig.1- Forward Current Derating Curve Fig.2- Maximum Non-Repetitive Peak Forward Surge Current 2.5 80 Pulse width 8.3ms Single Half-Sire-Wave 2.0 60 1.5 40 1.0 20 0.5 60Hz resistive or inductive load 0 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature, (C) Number Of Cycles At 60Hz Fig.3- Typical Instantaneous Forward Fig.4- Typical Reverse Characteristics Characteristics 100 10 o TJ=150C 10 o 1.0 TJ=125C 1.0 0.1 0.1 o TJ=25C TJ=25C TJ=100C TJ=125C TJ=150C 0.01 0.01 0 20 40 60 80 100 120 140 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage, (V) Fig.5 - Typical Junction Capacitance 100 o TJ=25C 10 1 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JBR05 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous Forward Current, (A) Average Forward Rectified Current, (A) Instantaneous Reverse Leakage Peak forward surge current, (A) current, (uA)